Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Barak Hoffer"'
Autor:
Barak Hoffer, Nicolas Wainstein, Christopher M. Neumann, Eric Pop, Eilam Yalon, Shahar Kvatinsky
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 2, Pp 77-83 (2022)
Stateful logic is a digital processing-in-memory (PIM) technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are used to
Externí odkaz:
https://doaj.org/article/11319dd6b3464e11b777bb8e074ef44a
Autor:
Wei Wang, Barak Hoffer, Tzofnat Greenberg-Toledo, Yang Li, Minhui Zou, Eric Herbelin, Ronny Ronen, Xiaoxin Xu, Yulin Zhao, Jianguo Yang, Shahar Kvatinsky
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 5, Pp n/a-n/a (2022)
The tunability of conductance states of various emerging nonvolatile memristive devices emulates the plasticity of biological synapses, making it promising in the hardware realization of large‐scale neuromorphic systems. The inference of the neural
Externí odkaz:
https://doaj.org/article/062ffac9045546a1acb4eb6253f67e12
Autor:
Wei Wang, Loai Danial, Yang Li, Eric Herbelin, Evgeny Pikhay, Yakov Roizin, Barak Hoffer, Zhongrui Wang, Shahar Kvatinsky
Publikováno v:
Nature Electronics. 5:870-880
Memristor-based neuromorphic computing could overcome the limitations of traditional von Neumann computing architectures -- in which data are shuffled between separate memory and processing units -- and improve the performance of deep neural networks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8dc937c114bbbbf7de123f1bb6119835
https://doi.org/10.1038/s41928-022-00878-9
https://doi.org/10.1038/s41928-022-00878-9
Autor:
Wei Wang, Barak Hoffer, Tzofnat Greenberg-Toledo, Yang Li, Minhui Zou, Eric Herbelin, Ronny Ronen, Xiaoxin Xu, Yulin Zhao, Jianguo Yang, Shahar Kvatinsky
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f422ecc643ba49107f1dd0b4a020fca1
https://doi.org/10.22541/au.164130702.22387391/v1
https://doi.org/10.22541/au.164130702.22387391/v1
Autor:
Wei Wang, Loai Danial, Eric Herbelin, Barak Hoffer, Batel Oved, Tzofnat Greenberg-Toledo, Evgeny Pikhay, Yakov Roizin, Shahar Kvatinsky
Publikováno v:
Applied Physics Letters
Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64e4dffc08d8b092141710f456591d7d
Publikováno v:
IEEE Transactions on Electron Devices. 68:5925-5925
In the above article [1] , we wish to add additional information and clarifications regarding the gates and circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20274003600f993a368385c6cee6549d
https://doi.org/10.1109/ted.2021.3109855
https://doi.org/10.1109/ted.2021.3109855
Autor:
Lior Kornblum, Barak Hoffer, Maria Baskin, Dana Cohen-Azarzar, Shahar Kvatinsky, Dror Miron, Eilam Yalon
Publikováno v:
Applied Physics Letters. 116:223503
A non-volatile resistive switching device is demonstrated, utilizing a 2D electron gas (2DEG) between a SrTiO3 substrate and an amorphous Al2O3 layer. A large resistance window is observed, and its origin is discussed. We pinpoint the role of the oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6754a946c58bf10345891dc5cd4c6412
https://doi.org/10.1063/5.0003590
https://doi.org/10.1063/5.0003590
Publikováno v:
IEEE Transactions on Electron Devices
IEEE transactions on electron devices : ED 67(8), 3115-3122 (2020). doi:10.1109/TED.2020.3001247
IEEE transactions on electron devices 67(8), 3115-3122 (2020). doi:10.1109/TED.2020.3001247
IEEE transactions on electron devices : ED 67(8), 3115-3122 (2020). doi:10.1109/TED.2020.3001247
IEEE transactions on electron devices 67(8), 3115-3122 (2020). doi:10.1109/TED.2020.3001247
IEEE transactions on electron devices : ED 67(8), 3115-3122 (2020). doi:10.1109/TED.2020.3001247
Published by IEEE, New York, NY
Published by IEEE, New York, NY
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0590b1d1f6eb6c022f8ff7f57247d0da
Publikováno v:
2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
ICECS
ICECS
—Modern computers suffer from a limited data transfer rate between the memory and the processing units. One of the attractive potential solutions to overcome this bottleneck is to combine processing and memory by performing computing in the same lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb08a48e56c16a3418c956722aa6305b