Zobrazeno 1 - 10
of 189
pro vyhledávání: '"Bar Sadan, Maya"'
Publikováno v:
In FlatChem September 2024 47
Autor:
Kadam, Sunil R., Krishnappa, Manjunath, Ghosh, Saptarshi, Sreedhara, M.B., Neyman, Alevtina, Upcher, Alexander, Nativ Roth, Einat, Houben, Lothar, Zak, Alla, Enyashin, Andrey N., Bar-Ziv, Ronen, Bar-Sadan, Maya
Publikováno v:
In Applied Materials Today August 2024 39
Autor:
Santoro, Sergio, Aquino, Marco, Rizza, Carlo, Occhiuzzi, Jessica, Mastrippolito, Dario, D'Olimpio, Gianluca, Avci, Ahmet H., De Santis, Jessica, Paolucci, Valentina, Ottaviano, Luca, Lozzi, Luca, Ronen, Avner, Bar-Sadan, Maya, Han, Dong Suk, Politano, Antonio, Curcio, Efrem
Publikováno v:
In Desalination 15 January 2023 546
Autor:
Bar-Hen, Avraham, Hettler, Simon, Ramasubramaniam, Ashwin, Arenal, Raul, Bar-Ziv, Ronen, Bar Sadan, Maya
Publikováno v:
In Journal of Energy Chemistry November 2022 74:481-488
Akademický článek
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Autor:
Bar-Hen, Avraham, Bar-Ziv, Ronen, Ohaion-Raz, Tsion, Mizrahi, Amir, Hettler, Simon, Arenal, Raul, Bar Sadan, Maya
Publikováno v:
In Chemical Engineering Journal 15 September 2021 420 Part 1
Publikováno v:
In Applied Surface Science 1 September 2021 559
Publikováno v:
In Applied Materials Today September 2020 20
Publikováno v:
J. Phys. Chem. C, 2013, 117, 10842
Layered molecular materials and especially MoS2 are already accepted as promising candidates for nanoelectronics. In contrast to the bulk material, the observed electron mobility in single-layer MoS2 is unexpectedly low. Here we reveal the occurrence
Externí odkaz:
http://arxiv.org/abs/1304.3701
Autor:
Enyashin, Andrey N., Yadgarov, Lena, Houben, Lothar, Popov, Igor, Weidenbach, Marc, Tenne, Reshef, Bar-Sadan, Maya, Seifert, Gotthard
Publikováno v:
J. Phys. Chem. C, 115 (2011) 24586
The phenomenon of a partial 2H\rightarrow1T phase transition within multiwalled WS2 nanotubes under substitutional Rhenium doping is discovered by means of high-resolution transmission electron microscopy. Using density-functional calculations for th
Externí odkaz:
http://arxiv.org/abs/1110.3848