Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Baquer Mazhari"'
Publikováno v:
AIP Advances, Vol 6, Iss 4, Pp 045017-045017-5 (2016)
Mobility of carriers at the organic/insulator interface is crucial to the performance of organic thin film transistors. The present work describes estimation of mobility using admittance measurements performed on an asymmetric capacitive test structu
Externí odkaz:
https://doaj.org/article/f7c222f9f5d84fd2bc95a73c9ede87ff
Publikováno v:
Active and Passive Electronic Components, Vol 2012 (2012)
This paper presents a complete analysis of the kink effect in SOI MOSFET and proposes a method for eliminating kink effect observed in the current-voltage output characteristics of a partially depleted SOI MOSFET device. In this method, back oxide fo
Externí odkaz:
https://doaj.org/article/64defde74dce4f90ae864e79a40da609
Autor:
Vinay K. Singh, Baquer Mazhari
Publikováno v:
AIP Advances, Vol 1, Iss 4, Pp 042123-042123-11 (2011)
The presence of gate leakage through polymer dielectric in organic thin film transistors (OTFT) prevents accurate estimation of transistor characteristics especially in subthreshold regime. To mitigate the impact of gate leakage on transfer character
Externí odkaz:
https://doaj.org/article/4c611c01145c4a7e99709f98dd65f5ae
Autor:
Baquer Mazhari, Rajesh Agarwal
Publikováno v:
IEEE Transactions on Electron Devices. 65:3460-3465
The threshold voltage of an organic thin-film transistor (OTFT) is sensitive to several variables, which makes it attractive for sensing applications. However, its measurement is not straightforward, especially, when mobility is gate voltage-dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f11d198e75d741dfbebf7a2c56b74f1a
https://doi.org/10.1109/ted.2018.2849445
https://doi.org/10.1109/ted.2018.2849445
Autor:
S. M. H. Rizvi, Baquer Mazhari
Publikováno v:
IEEE Transactions on Electron Devices. 65:3430-3437
A study of traps in thin organic semiconductor films is described through the analysis of their impact on current voltage ( ${J}-{V}$ ) characteristics of two terminal diode-like structures. The ${J}-{V}$ characteristics follow a power law whose expo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb2f18f69355ea66235f31add4615d07
https://doi.org/10.1109/ted.2018.2849346
https://doi.org/10.1109/ted.2018.2849346
Autor:
Baquer Mazhari, Rajesh Agarwal
Publikováno v:
IEEE Sensors Letters. 2:1-4
An area-asymmetric organic metal-insulator-semiconductor (AMIS) capacitor is described, which exhibits strong temperature dependence. The gate electrode in the device is made much larger than the top electrode so that a significant fraction of the ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39cba815efbb8fe266921e1c0bb7aeb3
https://doi.org/10.1109/lsens.2018.2800755
https://doi.org/10.1109/lsens.2018.2800755
Autor:
Ankita Gangwar, Baquer Mazhari
Publikováno v:
IEEE Transactions on Electron Devices. 63:4776-4781
A thin-film transistor (TFT) structure is proposed, where high current operation at low gate voltage is obtained through creation of an electric double layer at the semiconductor/insulator interface. For an n-type transistor, the dipole layer consist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::745091233762718350ce4e895bf47274
https://doi.org/10.1109/ted.2016.2614673
https://doi.org/10.1109/ted.2016.2614673
Autor:
Baquer Mazhari, Ankita Gangwar
Publikováno v:
IEEE Transactions on Electron Devices. 63:459-464
An organic thin-film transistor structure is proposed in which a channel is created through formation of an electric dipole layer at the semiconductor–insulator interface. The dipole is composed of mobile carriers, electrons, and holes and results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6665696179ebcaf132c7fd94b8434013
https://doi.org/10.1109/ted.2015.2499384
https://doi.org/10.1109/ted.2015.2499384
Autor:
Nadeem Firoz, Baquer Mazhari
Publikováno v:
Journal of Physics D: Applied Physics. 53:355104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beac295082fbf9f14e74baa3003a993d
https://doi.org/10.1088/1361-6463/ab8670
https://doi.org/10.1088/1361-6463/ab8670
Autor:
Baquer Mazhari, Ankita Gangwar
Publikováno v:
ECS Transactions. 67:199-204
A light-emitting device structure is proposed which includes an organic thin-film structure merged with an organic light-emitting diode structure by utilizing a part of the electron accumulation layer in the organic thin-film transistor as a common e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc9f2b84361a3477c803e394c616e9f3
https://doi.org/10.1149/06701.0199ecst
https://doi.org/10.1149/06701.0199ecst