Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Baozhen Zheng"'
Publikováno v:
PLoS ONE, Vol 19, Iss 8, p e0309076 (2024)
G0 arrest (G0A) is widely recognized as a crucial factor contributing to tumor relapse. The role of genes related to G0A in lung adenocarcinoma (LUAD) was unclear. This study aimed to develop a gene signature based on for LUAD patients and investigat
Externí odkaz:
https://doaj.org/article/e9283b191ba9443fa455f3ee6ece843f
Background: Anoikis is an apoptotic cell death, which is resulting from the loss of interaction between cells and the extracellular matrix, and has served a prominent role in metastasis. The aim of the present study was to identify an anoikis-revelan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5194c5fdb30fff52b478be850eea5321
https://doi.org/10.21203/rs.3.rs-2379948/v1
https://doi.org/10.21203/rs.3.rs-2379948/v1
Publikováno v:
The Chinese-German Journal of Clinical Oncology. 10:669-671
We report a case who was a 74-year-old female with hepatitis B virus (HBV) carrier for more than 30 years. The serum levels of AFP, CEA and CA199 were within normal range. CT scan demonstrated that a huge pedunculated mass of the right hepatic lobe p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d54a457ab3b94e70970caa446b1df16
https://doi.org/10.1007/s10330-011-0882-8
https://doi.org/10.1007/s10330-011-0882-8
Publikováno v:
Solid State Communications. 109:649-653
The effect of growth interruption (GI) on the optical properties of InAs/GaAs quantum dots was investigated by cw and time-resolved photoluminescence (PL). It is found that this effect depends very much on the growth conditions, in particular, the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::614542a5cedf3ee1224f88dbe5e39bd4
https://doi.org/10.1016/s0038-1098(99)00011-3
https://doi.org/10.1016/s0038-1098(99)00011-3
Autor:
Jiannong Wang, Zhongying Xu, Zhiliang Yuan, Weikun Ge, Leroy L. Chang, Zhendong Lü, Jizong Xu, Baozhen Zheng, Yuqi Wang, Xiaoping Yang
Publikováno v:
Superlattices and Microstructures. 23:381-387
We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f74fe516bd8fa5028445f4de4e4c878
https://doi.org/10.1006/spmi.1996.0196
https://doi.org/10.1006/spmi.1996.0196
Autor:
Weikun Ge, Zhiliang Yuan, Baozhen Zheng, Yuanwei Wang, Juping Xu, P. D. Wang, Ledentsov Nn, Sotomayor Torres Cm, Z. Y. Xu, S. S. Li, Jiannong Wang, Leroy L. Chang
Publikováno v:
Physical Review B. 54:16919-16924
Photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to study optical emissions of ultrathin InAs layers with average layer thickness ranging from 1/12 to 1 ML grown on GaAs substrates. We have found that the inhomogeneous broa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ed0ddb275ba3462d63a566f3599e5b5
https://doi.org/10.1103/physrevb.54.16919
https://doi.org/10.1103/physrevb.54.16919
Autor:
Leroy L. Chang, Jizong Xu, Yuqi Wang, Jiannong Wang, Baozhen Zheng, Zhiliang Yuan, Zhendong Lü, Zhongying Xu, Weikun Ge, Xiaoping Yang
Publikováno v:
Physical Review B. 54:11528-11531
We have investigated the temperature dependence of photoluminescence (PL) properties of a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 to 3 ML. The temperature dependence of InAs exciton emission and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fd42d4b94356801c2abdfeb941bf57d
https://doi.org/10.1103/physrevb.54.11528
https://doi.org/10.1103/physrevb.54.11528
Publikováno v:
Solid State Communications. 98:1039-1042
Ga(+)ion implantation followed by rapid thermal annealing (RTA) was used to enhance the interdiffusion in GaAs/AlGaAs single Quantum Wells(SQWs). The extent of intermixing was found to be dependent on the well depth, number of implanted ions and anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ac87663e6be06bd599b7af84c3efde
https://doi.org/10.1016/0038-1098(96)00176-7
https://doi.org/10.1016/0038-1098(96)00176-7
Publikováno v:
Physical Review B. 45:3489-3493
The photoluminescence from InxG1-xAs/GaAs strained quantum wells with thickness from 30 to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It was found that the pressure coefficients of the exciton peaks corresponding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acb3e899fe6efb06415724a96dbdc6b9
https://doi.org/10.1103/physrevb.45.3489
https://doi.org/10.1103/physrevb.45.3489
Publikováno v:
Journal of Luminescence. 46:137-145
We have used a picosecond nonlinear optical correlation technique to investigate the relaxation processes of hot nonequilibrium carriers in multiple quantum well structures. The average energy loss time constant πavg of the hot electrons was measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26766852fc3b7057afb66a31957d4abf
https://doi.org/10.1016/0022-2313(90)90014-3
https://doi.org/10.1016/0022-2313(90)90014-3