Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Baozhen Zheng"'
Publikováno v:
PLoS ONE, Vol 19, Iss 8, p e0309076 (2024)
G0 arrest (G0A) is widely recognized as a crucial factor contributing to tumor relapse. The role of genes related to G0A in lung adenocarcinoma (LUAD) was unclear. This study aimed to develop a gene signature based on for LUAD patients and investigat
Externí odkaz:
https://doaj.org/article/e9283b191ba9443fa455f3ee6ece843f
Background: Anoikis is an apoptotic cell death, which is resulting from the loss of interaction between cells and the extracellular matrix, and has served a prominent role in metastasis. The aim of the present study was to identify an anoikis-revelan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5194c5fdb30fff52b478be850eea5321
https://doi.org/10.21203/rs.3.rs-2379948/v1
https://doi.org/10.21203/rs.3.rs-2379948/v1
Publikováno v:
The Chinese-German Journal of Clinical Oncology. 10:669-671
We report a case who was a 74-year-old female with hepatitis B virus (HBV) carrier for more than 30 years. The serum levels of AFP, CEA and CA199 were within normal range. CT scan demonstrated that a huge pedunculated mass of the right hepatic lobe p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d54a457ab3b94e70970caa446b1df16
https://doi.org/10.1007/s10330-011-0882-8
https://doi.org/10.1007/s10330-011-0882-8
Publikováno v:
Solid State Communications. 109:649-653
The effect of growth interruption (GI) on the optical properties of InAs/GaAs quantum dots was investigated by cw and time-resolved photoluminescence (PL). It is found that this effect depends very much on the growth conditions, in particular, the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::614542a5cedf3ee1224f88dbe5e39bd4
https://doi.org/10.1016/s0038-1098(99)00011-3
https://doi.org/10.1016/s0038-1098(99)00011-3
Autor:
Jiannong Wang, Zhongying Xu, Zhiliang Yuan, Weikun Ge, Leroy L. Chang, Zhendong Lü, Jizong Xu, Baozhen Zheng, Yuqi Wang, Xiaoping Yang
Publikováno v:
Superlattices and Microstructures. 23:381-387
We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f74fe516bd8fa5028445f4de4e4c878
https://doi.org/10.1006/spmi.1996.0196
https://doi.org/10.1006/spmi.1996.0196
Autor:
Weikun Ge, Zhiliang Yuan, Baozhen Zheng, Yuanwei Wang, Juping Xu, P. D. Wang, Ledentsov Nn, Sotomayor Torres Cm, Z. Y. Xu, S. S. Li, Jiannong Wang, Leroy L. Chang
Publikováno v:
Physical Review B. 54:16919-16924
Photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to study optical emissions of ultrathin InAs layers with average layer thickness ranging from 1/12 to 1 ML grown on GaAs substrates. We have found that the inhomogeneous broa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ed0ddb275ba3462d63a566f3599e5b5
https://doi.org/10.1103/physrevb.54.16919
https://doi.org/10.1103/physrevb.54.16919
Autor:
Leroy L. Chang, Jizong Xu, Yuqi Wang, Jiannong Wang, Baozhen Zheng, Zhiliang Yuan, Zhendong Lü, Zhongying Xu, Weikun Ge, Xiaoping Yang
Publikováno v:
Physical Review B. 54:11528-11531
We have investigated the temperature dependence of photoluminescence (PL) properties of a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 to 3 ML. The temperature dependence of InAs exciton emission and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fd42d4b94356801c2abdfeb941bf57d
https://doi.org/10.1103/physrevb.54.11528
https://doi.org/10.1103/physrevb.54.11528
Publikováno v:
Solid State Communications. 98:1039-1042
Ga(+)ion implantation followed by rapid thermal annealing (RTA) was used to enhance the interdiffusion in GaAs/AlGaAs single Quantum Wells(SQWs). The extent of intermixing was found to be dependent on the well depth, number of implanted ions and anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ac87663e6be06bd599b7af84c3efde
https://doi.org/10.1016/0038-1098(96)00176-7
https://doi.org/10.1016/0038-1098(96)00176-7
Autor:
Ma, Yong1 (AUTHOR), Li, Zhilong1 (AUTHOR), Li, Dongbing2 (AUTHOR), Zheng, Baozhen3 (AUTHOR) zhengbz789@163.com, Xue, Yanfeng4 (AUTHOR) 18636076370@163.com
Publikováno v:
PLoS ONE. 8/19/2024, Vol. 19 Issue 8, p1-16. 16p.
Publikováno v:
Physical Review B. 45:3489-3493
The photoluminescence from InxG1-xAs/GaAs strained quantum wells with thickness from 30 to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It was found that the pressure coefficients of the exciton peaks corresponding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acb3e899fe6efb06415724a96dbdc6b9
https://doi.org/10.1103/physrevb.45.3489
https://doi.org/10.1103/physrevb.45.3489