Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Baoying, Dou"'
Autor:
Akira Nagaoka, Koji Kimura, Artoni Kelvin R. Ang, Yasuhiro Takabayashi, Kenji Yoshino, Qingde Sun, Baoying Dou, Su-Huai Wei, Koichi Hayashi, Kensuke Nishioka
Publikováno v:
Journal of the American Chemical Society. 145:9191-9197
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373b092f13e1044830a06ea9b2317d87
https://doi.org/10.1021/jacs.3c01248
https://doi.org/10.1021/jacs.3c01248
Publikováno v:
The Journal of Physical Chemistry Letters. 14:273-278
Low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb4735e711ea15b2facdc74073ca3b7d
https://doi.org/10.1021/acs.jpclett.2c03233
https://doi.org/10.1021/acs.jpclett.2c03233
Publikováno v:
Science China Physics, Mechanics & Astronomy. 65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6a027276f1210ff0716e59d4c53a770
https://doi.org/10.1007/s11433-022-1935-3
https://doi.org/10.1007/s11433-022-1935-3
Autor:
Yu, Song, Guanghui, Zhang, Xuefen, Cai, Baoying, Dou, Zhihao, Wang, Yang, Liu, Hang, Zhou, Le, Zhong, Gang, Dai, Xu, Zuo, Su-Huai, Wei
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(14)
Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e2477652b51294cfc23babe9a7aa52cd
https://pubmed.ncbi.nlm.nih.gov/35146908
https://pubmed.ncbi.nlm.nih.gov/35146908
Publikováno v:
Physical Review B. 104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e829769631b9ed47adfc21860060c73
https://doi.org/10.1103/physrevb.104.245202
https://doi.org/10.1103/physrevb.104.245202
Publikováno v:
Materials Today Communications. 33:104552
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c3e58ae9fe5e801de5732f6267c395
https://doi.org/10.1016/j.mtcomm.2022.104552
https://doi.org/10.1016/j.mtcomm.2022.104552
Autor:
Yu Song, Guanghui Zhang, Xuefen Cai, Baoying Dou, Zhihao Wang, Yang Liu, Hang Zhou, Le Zhong, Gang Dai, Xu Zuo, Su‐Huai Wei
Publikováno v:
Small. 18:2107516
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ad285ed174cbe56c29516ea58683791
https://doi.org/10.1002/smll.202107516
https://doi.org/10.1002/smll.202107516
Publikováno v:
Applied Physics Letters. 120:042105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84c23228e7c87f6205a24574382b0f3a
https://doi.org/10.1063/5.0079621
https://doi.org/10.1063/5.0079621