Zobrazeno 1 - 10
of 136
pro vyhledávání: '"Baoxing Duan"'
Publikováno v:
Micromachines, Vol 14, Iss 10, p 1890 (2023)
SiC/Si and GaN/Si heterojunction technology has been widely used in power semiconductor devices, and SiC/Si VDMOS and GaN/Si VDMOS were proposed in our previous paper. Based on existing research, breakdown point transfer technology (BPT) was used to
Externí odkaz:
https://doaj.org/article/62487298f80c49539bc1e73315b4cd99
Publikováno v:
Micromachines, Vol 14, Iss 6, p 1166 (2023)
A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high
Externí odkaz:
https://doaj.org/article/8bb79661ad1e414db996d347a351b0b0
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 114-120 (2021)
A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS Si/SiC LDMOS) is proposed in this paper for the first time. The innovative terminal technology of Brea
Externí odkaz:
https://doaj.org/article/08bfa1a75a084af892643ea1bc378770
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 409-414 (2021)
A novel low loss lateral insulated gate bipolar transistor (LIGBT) with high voltage level is designed and studied in this paper, and is proposed with assisted depletion N-region (AD) and P-buried layer (PB) in the bulk Si substrate, named PBAD LIGBT
Externí odkaz:
https://doaj.org/article/70057a7913544b5f9b9e1a7d2a3feb20
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 686-694 (2020)
The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time. The analytical solutions of the surface electric
Externí odkaz:
https://doaj.org/article/c6d68389140444bf9981cb7a529a5fe0
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 559-564 (2020)
In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time. The breakdo
Externí odkaz:
https://doaj.org/article/6c691defe3184630bce1838587b3624b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 442-447 (2020)
In order to explore the distribution of the device temperature field, this paper takes the new AlGaN/GaN HEMT with partial etched AlGaN layer as the research object. First, the ISE TCAD software is used to simulate the temperature field of AlGaN/GaN
Externí odkaz:
https://doaj.org/article/f4dc2a3a4bf44053841034e165826c6e
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1082-1088 (2020)
In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied. The structure is characterized by the use of the base-gate
Externí odkaz:
https://doaj.org/article/8349ccfef1df4f48ac8a59e52d2825ae
Autor:
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang
Publikováno v:
Micromachines, Vol 13, Iss 4, p 573 (2022)
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp). The innovative terminal technology of Breakdown Point
Externí odkaz:
https://doaj.org/article/661852a5504a4fbe9506b61826417a8b
Publikováno v:
IEEE Transactions on Electron Devices. 70:2905-2910
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::704e20b7497a8efe7aded036332028e6
https://doi.org/10.1109/ted.2023.3264962
https://doi.org/10.1109/ted.2023.3264962