Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Baowei Qiao"'
Publikováno v:
Japanese Journal of Applied Physics. 46:5724-5728
A method has been introduced to realize multi-states storage in phase change memory (PCM) by using stacked phase change films with different amorphous resistivity. The amorphous resistivity of each phase change layer was selected to make the stacked
Autor:
Bomy Chen, Jie Feng, Yinyin Lin, Y.F. Lai, Baowei Qiao, Bingchu Cai, Tingao Tang, Yafei Zhang
Publikováno v:
Applied Physics A. 87:57-62
The characteristics of phase change memory devices in size of several micrometers and with pure Ge2Sb2Te5 (GST), N-doped GST, and Si-doped GST films were investigated and compared with each other. The Si-doped GST device can perform SET and RESET cyc
Autor:
Bingchu Cai, Tingao Tang, Yinyin Lin, Yanfei Cai, Yunfeng Lai, Jie Feng, Bomy Chen, Baowei Qiao
Publikováno v:
Journal of Electronic Materials. 36:88-91
The switching characteristics of the electrical phase-change memory device using a SiSbTe film were studied. The SiSbTe film has a wider variation of electrical resistivity (up to 107 times) along with crystallization than that of the conventionally
Autor:
Bingchu Cai, Tingao Tang, Bomy Chen, Lianzhang Lai, Yunfeng Lai, Jie Feng, Yun Ling, Baowei Qiao, Yinyin Lin
Publikováno v:
Integrated Ferroelectrics. 78:261-270
The performance of Nonvolatile phase-change-memory material Ge2Sb2Te5 and nitrogen doped Ge2Sb2Te5 as well as its device cell was investigated. The effects of the annealing temperature on the resistivity and crystal structure of the Ge2Sb2Te5 were st
Autor:
Bomy Chen, Bingchu Cai, Tingao Tang, Yunfeng Lai, Jie Feng, Yun Ling, Yinyin Lin, Baowei Qiao
Publikováno v:
Applied Surface Science. 252:8404-8409
The effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge2Sb2Te5 film. The addition of Si in the Ge
Autor:
Bomy Chen, Yinyin Lin, Feifei Liao, Yunfeng Lai, Tingao Tang, Jie Feng, Baowei Qiao, Yiqing Ding
Publikováno v:
Microelectronics Journal. 37:841-844
With the increasing requirement of high density memory technology, a new cell structure—1TR has received much attention. It consists of a single thin film transistor (TFT) with chalcogenide Ge2Sb2Te5 as the channel material. In order to evaluate th
Autor:
Bomy Chen, Yinyin Lin, Yunfeng Lai, Yanfei Cai, Baowei Qiao, Bingchu Cai, Tingao Tang, Jie Feng
Publikováno v:
Semiconductor Science and Technology. 21:1073-1076
Electrical properties and crystallization behaviour of Si–Sb–Te films were studied and compared with those of a Ge2Sb2Te5 film. The resistivity ratio of Si–Sb–Te films can reach 106 during the amorphous–crystalline transition, accompanied w
Autor:
Yinyin Lin, Baowei Qiao, Tingao Tang, Yunfeng Lai, Hangbing Lv, Jie Feng, Peng Zhou, Bomy Chen
Publikováno v:
Semiconductor Science and Technology. 21:1013-1017
A nano-scale-sized 3D phase change memory element has been successfully fabricated using novel metal sidewall pattern technology, based entirely on a CMOS process which is independent of lithographic size limitations. With Ge2Sb2Te5 (GST) as the phas
Publikováno v:
Applied Physics A. 84:21-25
The multi-state storage capability of phase-change memory (PCM) was confirmed by using stacked chalcogenide layers as storage medium. The stacked films were prepared by stacking a pure Ge2Sb2Te5 (GST) layer, a tungsten layer and a silicon-doped GST l
Autor:
Yinyin Lin, Bingchu Cai, Bomy Chen, Yunfeng Lai, Tingao Tang, Baowei Qiao, Jie Feng, Lianzhang Lai, Yun Ling
Publikováno v:
Journal of Electronic Materials. 34:176-181
Nitrogen-doped Ge2Sb2Te5 (GST) films for nonvolatile memories were prepared by reactive sputtering with a GST alloy target. Doped nitrogen content was determined by using x-ray photoelectron spectroscopy (XPS). The crystallization behavior of the fil