Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Baosuo Zhou"'
Autor:
Harmeet Singh, R. Dasaka, Rich Wise, Meihua Shen, Andrew D. Bailey, John Hoang, Yifeng Zhou, Jim Bowers, Baosuo Zhou, Eric A. Pape
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 28:502-507
The introduction of 3-D structures and new materials for advanced logic devices at extremely fine feature size presents challenges for within-wafer and wafer-to-wafer thickness uniformity control that is critical for yield and performance. For conven
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6797ca20712c728e4757fb4dd6edd4d
https://doi.org/10.1109/tsm.2015.2477718
https://doi.org/10.1109/tsm.2015.2477718
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:114-125
Gas and surface phase chemistries of CF4 plasma were studied in an inductively coupled modified gaseous electronics conference reference cell, using in situ Fourier transform infrared spectroscopy enhanced by a multipass White cell and in situ spectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f085a6a91a52acf622d7cddc9cd5f8b1
https://doi.org/10.1116/1.2138718
https://doi.org/10.1116/1.2138718
Autor:
Yonghua Liu, Lawrence J. Overzet, Eric A. Joseph, Arun Radhakrishnan, Sanket Sant, Matthew Goeckner, Baosuo Zhou
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1657-1667
The effect of wall temperature, from 50to200°C, on gas phase chemistry and substrate etching rates has been studied in inductively coupled CF4 plasma under two distinctive initial wall conditions, namely “clean” and “seasoned.” During plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87caa752ff1a0210273cdafc55b56e8e
https://doi.org/10.1116/1.2049309
https://doi.org/10.1116/1.2049309
Autor:
Harmeet Singh, Jim Bowers, Baosuo Zhou, R. Dasaka, John Hoang, Rich Wise, Eric A. Pape, Yifeng Zhou, Meihua Shen, Andrew D. Bailey
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
The introduction of 3D devices and new materials at sub 28 nm nodes presents challenges for within-wafer and wafer-to-wafer CMP thickness uniformity control that are critical for device yield and performance. Upon CMP the typical thin film uniformity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12c7b7b481582be1f4de802cf92affe2
https://doi.org/10.1109/asmc.2014.6846968
https://doi.org/10.1109/asmc.2014.6846968
The canister experiment of the Ti-C reaction as a heat source for space chemical release experiments
Publikováno v:
Advances in Space Research. 24:989-992
A canister experiment of the Ti-C reaction as the heating technique for chemical release experiments was carried out in the laboratory. A pulse power source was utilized to produce a spark between a pin electrode and the reaction mixture. The heat ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8dd2ddb7bf70355dca3abcee11fe97b
https://doi.org/10.1016/s0273-1177(99)00565-7
https://doi.org/10.1016/s0273-1177(99)00565-7
Publikováno v:
Physics of Plasmas. 5:1328-1335
On the China Tokamak (CT-6B) [Nucl. Fusion 36, 1669 (1996)], application of negative limiter bias resulted in enhanced Er shear in the naturally occurring Er shear layer near the fixed limiter radius with negligible change of plasma density, electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76227026ee11226f1c9fa376a34023ee
https://doi.org/10.1063/1.872792
https://doi.org/10.1063/1.872792
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jan2006, Vol. 24 Issue 1, p114-125, 12p, 1 Diagram, 1 Chart, 10 Graphs