Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Bao-ping Zhang"'
Autor:
Ya-Chao Wang, Yan-Hui Chen, Zhong-Ming Zheng, Tao Yang, Yang Mei, Lei-Ying Ying, Bao-Ping Zhang
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 1, Pp 1-6 (2024)
Gallium Nitride (GaN)-based vertical-cavity surface-emitting lasers (VCSELs) in green spectral region face the difficulty of the “green gap”. One of the main obstacles is the strong polarization electric field in GaN-based materials, which leads
Externí odkaz:
https://doaj.org/article/2adc38a28fda4736a61c0502401322a4
Autor:
Tao Yang, Yan-Hui Chen, Ya-Chao Wang, Wei Ou, Lei-Ying Ying, Yang Mei, Ai-Qin Tian, Jian-Ping Liu, Hao-Chung Guo, Bao-Ping Zhang
Publikováno v:
Nano-Micro Letters, Vol 15, Iss 1, Pp 1-11 (2023)
Highlights Continuous-wave green vertical-cavity surface-emitting lasers based on self-formed quantum dots were realized with the lowest threshold current density of 51.97 A cm−2. A short cavity (~4.0 λ, where λ is the wavelength in the media) wa
Externí odkaz:
https://doaj.org/article/c7c41ae2442c46309db895acaba5df68
Autor:
Yan-Hui Chen, Yang Mei, Zhong-Ming Zheng, Rong-Bin Xu, Ya-Chao Wang, Lei-Ying Ying, Zhi-Wei Zheng, Hao Long, Yi-Kun Bu, Bao-Ping Zhang
Publikováno v:
AIP Advances, Vol 13, Iss 7, Pp 075114-075114-7 (2023)
For GaN-based vertical-cavity surface-emitting lasers (VCSELs), a suitable current confinement layer is essential for high-performance devices. The effect of different current confinement layers, including SiO2, AlN, and diamond, on the performance o
Externí odkaz:
https://doaj.org/article/2797afdd9760485cb36c3e9c6e5ec40d
Autor:
Tao Yang, Yan-Hui Chen, Ya-Chao Wang, Wei Ou, Lei-Ying Ying, Yang Mei, Ai-Qin Tian, Jian-Ping Liu, Hao-Chung Kuo, Bao-Ping Zhang
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-1 (2023)
Externí odkaz:
https://doaj.org/article/21bba86e35a14cb4abfa80a429dc3bd4
Publikováno v:
Fundamental Research, Vol 1, Iss 6, Pp 684-690 (2021)
Optically pumped wavelength-tunable vertical-cavity surface-emitting lasers (VCSELs) operating in the ultraviolet A (UVA) spectrum were demonstrated. The VCSELs feature double dielectric distributed brag reflectors and a wedge-shaped cavity fabricate
Externí odkaz:
https://doaj.org/article/f29d68f46c844312ab3aa25beaedb244
Autor:
Guan-You He, Ming-Hao Li, Wei-Dong Liu, Lei-Ying Ying, Bao-Ping Zhang, Zhi-Wei Zheng, Chun-Hu Cheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 741-747 (2021)
With the simulation calibration for negative capacitor considering Landau model and multi-domain (MD) effect, MD MFIS negative capacitance field-effect transistor (NCFET) was thoroughly established for performing the simultaneous analysis of multi-va
Externí odkaz:
https://doaj.org/article/f993fec46e35492ea6801bb0f79e5753
Autor:
Li-E. Cai, Bao-Ping Zhang, Hao-Xiang Lin, Zai-Jun Cheng, Peng-Peng Ren, Zhi-Chao Chen, Jin-Man Huang, Lin-Lin Cai
Publikováno v:
AIP Advances, Vol 12, Iss 6, Pp 065007-065007-5 (2022)
GaN/GaInN asymmetric multiple quantum well light-emitting diodes with varying potential barrier thicknesses (5 and 15 nm) are grown by using metal organic chemical vapor deposition. The narrow barrier structure improves the performance of the device,
Externí odkaz:
https://doaj.org/article/5931344a18664a49aa05218a53456d23
Publikováno v:
China Foundry, Vol 13, Iss 4, Pp 231-237 (2016)
Five organic esters with different curing speeds: propylene carbonate (i.e. high-speed ester A); 1, 4-butyrolactone; glycerol triacetate (i.e. medium-speed ester B); glycerol diacetate; dibasic ester (DBE) (i.e. low-speed ester C), were chosen to rea
Externí odkaz:
https://doaj.org/article/255c86196e154f329ec5d68bc384ad5c
Publikováno v:
IEEE Transactions on Electron Devices. 70:806-811
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6364052be2f5f7a413d5c63615d855c
https://doi.org/10.1109/ted.2022.3231227
https://doi.org/10.1109/ted.2022.3231227
Autor:
Wei Ou, Yang Mei, Daisuke Iida, Huan Xu, Minchao Xie, Yiwei Wang, Lei-Ying Ying, Bao-Ping Zhang, Kazuhiro Ohkawa
Publikováno v:
Journal of Lightwave Technology. 40:4337-4343
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba51b3040a59a02fd63e5c7a32865905
https://doi.org/10.1109/jlt.2022.3161637
https://doi.org/10.1109/jlt.2022.3161637