Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Bao-Xue Bo"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:7204-7211
Two isomers of benzimidazoles, N,N-diphenyl-4′-(1-phenyl-1H-benzo[d] imidazol-2-yl)-[1,1′-biphenyl]-4-amine (TPABBI) and N,N-diphenyl-4′-(1-phenyl-1H-benzo[d]imidazol-2-yl)-[1,1′-biphenyl]-3-amine (m-TPABBI), were developed for blue OLEDs. Th
Autor:
Gao Yonghui, Zhi-jie Kang, Gang Zhang, Qian Tang, Bao-xue Bo, Jin Wang, Wenlong Jiang, Bin Su
Publikováno v:
Journal of Materials Science: Materials in Electronics. 27:5676-5679
The organic light emitting diodes (OLEDs) using graphene doped in N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) (NPB:Graphene) as hole transport layer was fabricated in this study. The structure of device was ITO/NPB:Gr
Publikováno v:
IEEE Journal of Quantum Electronics. 52:1-5
Square microcavity lasers with a cut-corner are proposed and demonstrated for realizing unidirectional emission single-mode lasers. The mode characteristics of the square resonator with a cut-corner are investigated by 2-D finite-element method simul
Publikováno v:
Advanced Materials Research. 1089:202-205
The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the fr
Publikováno v:
DEStech Transactions on Materials Science and Engineering.
Controllable synthesis of high quality large area monolayer MoS2 is still a challenge for its practice application. In this work, we report an Au foil assistant synthesis large size (400 μm) single crystals MoS2 on quartz substrate via chemical vapo
Autor:
Bao Xue Bo, Yan Ping Yao
Publikováno v:
Applied Mechanics and Materials. :1653-1657
Amorphous InAs films are deposited on substrates of quartz glass by RF magnetron sputtering technique in different gas ambient. We present a systematic study of the affects of the sputtering parameters on the chemical composition. Amorphous InAs (a-I
Publikováno v:
Advanced Materials Research. 871:221-225
A novel polishing technology for the GaAs based diode lasers wafer is presented. Designed for technological simplicity and minimum damage generated within the GaAs based diode lasers wafer. It combines GaAs based diode lasers wafer polishing with thr
Publikováno v:
Applied Mechanics and Materials. 481:278-282
A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology, semiconductor laser are cleaved in the air, and the surface oxide layer is removed with a low energy io
Publikováno v:
Key Engineering Materials. 552:398-404
This paper introduces two types of precise temperature controllers for high power semiconductor laser diodes. We apply a category of self-tuning parameter fuzzy-PID controller,and a kind of neuronal network optimized rules fuzzy-PID controller to r
Publikováno v:
Applied Mechanics and Materials. :164-167
In this few years with the development of the application of the technique about the fiber sensing in several areas with the bad testing environment, it demands the packaging structure of the fiber interferometer, the center device in the fiber sensi