Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Bao-Tang Jheng"'
Autor:
Bao-tang Jheng, 鄭寶堂
97
As one of the main sources of instability in p-MOSFETs, interface state (Nit) generation has become an important reliability issue for over three decades.Interface state can be generated gradually under device operational conditions or genera
As one of the main sources of instability in p-MOSFETs, interface state (Nit) generation has become an important reliability issue for over three decades.Interface state can be generated gradually under device operational conditions or genera
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/7e99uq
Publikováno v:
Science of Advanced Materials. 7:233-238
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ef4b6a9e1fc2d214d5f523b45eff42
https://doi.org/10.1166/sam.2015.2102
https://doi.org/10.1166/sam.2015.2102
Publikováno v:
Solar Energy Materials and Solar Cells. 128:275-282
Copper zinc tin sulfide (Cu2ZnSnS4, CZTS) is highly abundant in nature. It is an important absorber material for the development of low-cost and sustainable next-generation I2–II–IV–VI4 thin-film solar cells because it has a the tunable direct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04c5d9eb3487acdd60696b13392f06db
https://doi.org/10.1016/j.solmat.2014.05.033
https://doi.org/10.1016/j.solmat.2014.05.033
Publikováno v:
Thin Solid Films. 564:345-350
Kesterite-type Cu 2 ZnSnS 4 (CZTS) thin films were directly deposited from a single quaternary CZTS target. In this study, we investigated the influence of substrate temperature on structural, compositional, electrical and optical properties of CZTS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57ff5597af3bd49f35ae6b0a5e6904a3
https://doi.org/10.1016/j.tsf.2014.05.053
https://doi.org/10.1016/j.tsf.2014.05.053
Publikováno v:
ECS Transactions. 50:53-58
Polycrystalline Cu(In, Ga)Se2 (CIGS)-based solar cell has emerged as one of the most promising absorber materials for inexpensive, high-efficiency solar cell applications, because of its tunable bandgap (1.04~1.68 eV), high-absorption coefficient (α
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f05f2c6c8b7fd7e2e66d1a9209be64c5
https://doi.org/10.1149/05049.0053ecst
https://doi.org/10.1149/05049.0053ecst
Publikováno v:
IEEE Electron Device Letters. 29:1222-1225
Polycrystalline silicon thin-film transistors (TFTs) can be improved by integrating DRAM on chip. However, the TFT's poor capacitance means that traditional DRAMs are infeasible, because they require a capacitor. An alternative, the one-transistor DR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35feedd5f5fb772581d74df65cf4a88d
https://doi.org/10.1109/led.2008.2004632
https://doi.org/10.1109/led.2008.2004632
Publikováno v:
Nanoscale Research Letters
In this study, a non-selenized CuInGaSe2 (CIGS) solar device with textured zinc oxide (ZnO) antireflection coatings was studied. The ZnO nanostructure was fabricated by a low-temperature aqueous solution deposition method. With controlling the morpho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd0bcbbd1e8aa578e79d235dc20f534b
https://doi.org/10.1186/1556-276x-9-331
https://doi.org/10.1186/1556-276x-9-331
Publikováno v:
Optics letters. 37(13)
This work presents a novel method to form polycrystalline Cu(In(1-x)Ga(x))Se(2) (CIGS) thin film by co-sputtering of In─Se and Cu─Ga alloy targets without an additional selenization process. An attempt was also made to thoroughly elucidate the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::596731e81cf5f9e10d16108b35aff21b
https://pubmed.ncbi.nlm.nih.gov/22743520
https://pubmed.ncbi.nlm.nih.gov/22743520
Autor:
Shiang-Shi Kang, Po-Hsieh Lin, Hung-Jen Tseng, Ying-Chieh Tsai, Bao-Tang Jheng, Yi-Ming Tseng, Yi-Chuen Eng, Jyi-Tsong Lin
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
This paper proposes a new self-aligned process to form the silicon-on-insulator with block oxide. Based on the TCAD simulation, we have proved that the new process can get excellent short-channel effects immunity compared to the previous process [1].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a22b625486cf7bc4292a7ae4181c9cf
https://doi.org/10.1109/icsict.2008.4734754
https://doi.org/10.1109/icsict.2008.4734754
Autor:
Po-Hsieh Lin, Bao-Tang Jheng, Shiang-Shi Kang, Yi-Chuen Eng, Ying-Chieh Tasi, Hung-Jen Tseng, Yi-Ming Tseng, Jyi-Tsong Lin
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
A self-aligned novel S/D tie SOI device is presented for the first time in the field of silicon on insulator technology. The new device having thick-body and body-passway is demonstrated to improve the self-heating effect and decrease the parasitic s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97877d8a00658b40f71a838e104e6c0e
https://doi.org/10.1109/icsict.2008.4734511
https://doi.org/10.1109/icsict.2008.4734511