Zobrazeno 1 - 10
of 386
pro vyhledávání: '"Bao Wenzhong"'
Autor:
Gou Saifei, Wang Yin, Dong Xiangqi, Xu Zihan, Wang Xinyu, Sun Qicheng, Xie Yufeng, Zhou Peng, Bao Wenzhong
Publikováno v:
National Science Open, Vol 2 (2023)
In-memory computing is an alternative method to effectively accelerate the massive data-computing tasks of artificial intelligence (AI) and break the memory wall. In this work, we propose a 2T1C DRAM structure for in-memory computing. It integrates a
Externí odkaz:
https://doaj.org/article/cb03d18c262e4ee784bd574d23ec35da
Autor:
Wang, Xinyu, Wang, Die, Tian, Yuchen, Guo, Jing, Miao, Jinshui, Hu, Weida, Wang, Hailu, Liu, Kang, Shao, Lei, Gou, Saifei, Dong, Xiangqi, Su, Hesheng, Sheng, Chuming, Zhu, Yuxuan, Zhang, Zhejia, Zhang, Jinshu, Sun, Qicheng, Xu, Zihan, Zhou, Peng, Chen, Honglei, Bao, Wenzhong
Publikováno v:
In Chip August 2024
Autor:
Liao, Fuyou, Deng, Jianan, Chen, Xinyu, Wang, Yin, Zhang, Xinzhi, Liu, Jian, Zhu, Hao, Chen, Lin, Sun, Qingqing, Hu, Weida, Wang, Jianlu, Zhou, Jing, Zhou, Peng, Zhang, David Wei, Wan, Jing, Bao, Wenzhong
Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect originated f
Externí odkaz:
http://arxiv.org/abs/1912.07880
Autor:
Liao, Fuyou, Sheng, Yaocheng, Guo, Zhongxun, Tang, Hongwei, Wang, Yin, Zong, Lingyi, Chen, Xinyu, Riaud, Antoine, Zhu, Jiahe, Xie, Yufeng, Chen, Lin, Zhu, Hao, Sun, Qingqing, Zhou, Peng, Jiang, Xiangwei, Wan, Jing, Bao, Wenzhong, Zhang, David Wei
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we s
Externí odkaz:
http://arxiv.org/abs/1912.07885
Autor:
Liao, Fuyou, Guo, Zhongxun, Wang, Yin, Xie, Yufeng, Zhang, Simeng, Sheng, Yaochen, Tang, Hongwei, Xu, Zihan, Riaud, Antoine, Zhou, Peng, Wan, Jing, Fuhrer, Michael S., Jiang, Xiangwei, Zhang, David Wei, Chai, Yang, Bao, Wenzhong
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m for a mon
Externí odkaz:
http://arxiv.org/abs/1912.07873
Akademický článek
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Autor:
Tong, Ling, Guo, Xiaojiao, Shen, Zhangfeng, Zhou, Lihui, Ma, Jingyi, Chen, Xinyu, Chen, Honglei, Xia, Yin, Sheng, Chuming, Gou, Saifei, Wang, Die, Wang, Xinyu, Dong, Xiangqi, Zhu, Yuxuan, Zhang, Xinzhi, Zhang, David Wei, Dai, Sheng, Li, Xi, Zhou, Peng, Wang, Yangang, Bao, Wenzhong
Publikováno v:
In Journal of Materials Science & Technology 10 January 2023 133:230-237
Publikováno v:
In Infrared Physics and Technology August 2023
Akademický článek
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Autor:
Zhu, Yingying, Liu, Lianzi, Wang, Jianan, Peng, Ruwen, Qi, Dongxiang, Bao, Wenzhong, Fan, Renhao, Wang, Mu
Pauli blockade occurs when the excited electrons fill up the states near the conduction bands and block subsequent absorption in semiconductors, and has been widely applied in mode-locking for passively-pulsed-laser systems. In this letter, we report
Externí odkaz:
http://arxiv.org/abs/1806.04453