Zobrazeno 1 - 10
of 570
pro vyhledávání: '"Banszerus L"'
Autor:
Banszerus, L., Andersson, C. W., Marshall, W., Lindemann, T., Manfra, M. J., Marcus, C. M., Vaitiekėnas, S.
Controlling the current-phase relation (CPR) of Josephson elements is essential for tailoring the eigenstates of superconducting qubits, tuning the properties of parametric amplifiers, and designing nonreciprocal superconducting devices. Here, we int
Externí odkaz:
http://arxiv.org/abs/2406.20082
Autor:
Banszerus, L., Marshall, W., Andersson, C. W., Lindemann, T., Manfra, M. J., Marcus, C. M., Vaitiekėnas, S.
We report measurements of the current-phase relation of two voltage-controlled semiconductor-superconductor hybrid Josephson junctions (JJs) in series. The two hybrid junctions behave similar to a single-mode JJ with effective transparency determined
Externí odkaz:
http://arxiv.org/abs/2402.11603
Autor:
Icking, E., Banszerus, L., Wörtche, F., Volmer, F., Schmidt, P., Steiner, C., Engels, S., Hesselmann, J., Goldsche, M., Watanabe, K., Taniguchi, T., Volk, C., Beschoten, B., Stampfer, C.
Publikováno v:
Adv. Electron. Mater. 8, 2200510 (2022)
The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Be
Externí odkaz:
http://arxiv.org/abs/2206.02057
Autor:
Banszerus, L., Hecker, K., Möller, S., Icking, E., Watanabe, K., Taniguchi, T., Volk, C., Stampfer, C.
Publikováno v:
Nat Commun 13, 3637 (2022)
The relaxation time of a single-electron spin is an important parameter for solid-state spin qubits, as it directly limits the lifetime of the encoded information. Thanks to the low spin-orbit interaction and low hyperfine coupling, graphene and bila
Externí odkaz:
http://arxiv.org/abs/2110.13051
Autor:
Banszerus, L., Frohn, B., Fabian, T., Somanchi, S., Epping, A., Müller, M., Neumaier, D., Watanabe, K., Taniguchi, T., Libisch, F., Beschoten, B., Hassler, F., Stampfer, C.
Publikováno v:
Phys. Rev. Lett. 124, 177701 (2020)
We report on measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit coupling. The size of this splitting can be tuned from 40 to 80 $\mu$eV b
Externí odkaz:
http://arxiv.org/abs/1911.13176
Autor:
Banszerus, L., Sohier, T., Epping, A., Winkler, F., Libisch, F., Haupt, F., Watanabe, K., Taniguchi, T., Müller-Caspary, K., Marzari, N., Mauri, F., Beschoten, B., Stampfer, C.
High carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier mobility. Van de
Externí odkaz:
http://arxiv.org/abs/1909.09523
Autor:
Verbiest, G. J., Janssen, H., Xu, D., Ge, X., Goldsche, M., Sonntag, J., Khodkov, T., Banszerus, L., Driesch, N. von den, Buca, D., Watanabe, K., Taniguchi, T., Stampfer, C.
Publikováno v:
Review of Scientific Instruments 90, 084706 (2019)
We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing
Externí odkaz:
http://arxiv.org/abs/1901.05769
Autor:
Graef, H., Wilmart, Q., Rosticher, M., Mele, D., Banszerus, L., Stampfer, C., Taniguchi, T., Watanabe, K., Berroir, J-M., Bocquillon, E., Fève, G., Teo, E. H. T., Plaçais, B.
Dirac fermion optics exploits the refraction of chiral fermions across optics-inspired Klein-tunneling barriers defined by high-transparency p-n junctions. We consider the corner reflector (CR) geometry introduced in optics or radars. We fabricate Di
Externí odkaz:
http://arxiv.org/abs/1901.02225
Autor:
Tielrooij, K. J., Hesp, N. C. H., Principi, A., Lundeberg, M., Pogna, E. A. A., Banszerus, L., Mics, Z., Massicotte, M., Schmidt, P., Davydovskaya, D., Purdie, D. G., Goykhman, I., Soavi, G., Lombardo, A., Watanabe, K., Taniguchi, T., Bonn, M., Turchinovich, D., Stampfer, C., Ferrari, A. C., Cerullo, G., Polini, M., Koppens, F. H. L.
Publikováno v:
Nature Nanotechnology 13, 41-46 (2018)
Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic properties. Applications such as thermal management, photodetection, l
Externí odkaz:
http://arxiv.org/abs/1702.03766
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