Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Bansal, Namrata"'
Autor:
Bansal, Namrata, Li, Qili, Nufer, Paul, Zhang, Lichuan, Haghighirad, Amir-Abbas, Mokrousov, Yuriy, Wulfhekel, Wulf
We study the dynamic coupling of magnons and phonons in single crystals of Fe3GeTe2 (FGT) using inelastic scanning tunneling spectroscopy (ISTS) with an ultra-low temperature scanning tunneling microscope. Inelastic scattering of hot carriers off pho
Externí odkaz:
http://arxiv.org/abs/2308.10774
Autor:
Yang, Hung-Hsiang, Bansal, Namrata, Rüßmann, Philipp, Hoffmann, Markus, Zhang, Lichuan, Go, Dongwook, Li, Qili, Haghighirad, Amir-Abbas, Sen, Kaushik, Blügel, Stefan, Tacon, Matthieu Le, Mokrousov, Yuriy, Wulfhekel, Wulf
Publikováno v:
2D Materials 9, 025022 (2022)
Among two-dimensional materials, Fe$_3$GeTe$_2$ has come to occupy a very important place owing to its ferromagnetic nature with one of the highest Curie temperatures among known van der Waals materials and the potential for hosting skyrmions. In thi
Externí odkaz:
http://arxiv.org/abs/2203.13562
Autor:
Bansal, Namrata
Thesis (M.S.)--University of Texas at Dallas, 2007.
Includes vita. Includes bibliographical references (leaves 58-66)
Includes vita. Includes bibliographical references (leaves 58-66)
Externí odkaz:
http://proquest.umi.com/pqdweb?did=1441204021&sid=4&Fmt=2&clientId=10361&RQT=309&VName=PQD
Publikováno v:
Solid State Communications, 215, 54-62 (2015)
We reanalyze some of the critical transport experiments and provide a coherent understanding of the current generation of topological insulators (TIs). Currently TI transport studies abound with widely varying claims of the surface and bulk states, o
Externí odkaz:
http://arxiv.org/abs/1408.1614
Autor:
Bansal, Namrata, Koirala, Nikesh, Brahlek, Matthew, Han, Myung-Geun, Zhu, Yimei, Cao, Yue, Waugh, Justin, Dessau, Daniel S., Oh, Seongshik
Publikováno v:
Appl. Phys. Lett. 104, 241606 (2014)
The recent emergence of topological insulators (TI) has spurred intensive efforts to grow TI thin films on various substrates. However, little is known about how robust the topological surface states (TSS) are against disorders and other detrimental
Externí odkaz:
http://arxiv.org/abs/1406.2251
Publikováno v:
Phys. Rev. Lett. 113, 026801 (2014)
In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the topological states
Externí odkaz:
http://arxiv.org/abs/1406.1252
Autor:
Bansal, Namrata, Cho, Myung Rae, Brahlek, Matthew, Koirala, Nikesh, Horibe, Yoichi, Chen, Jing, Wu, Weida, Park, Yun Daniel, Oh, Seongshik
Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-sized flakes that are highly irregular in shape and thickness. In this w
Externí odkaz:
http://arxiv.org/abs/1402.6307
Autor:
Brahlek, Matthew, Bansal, Namrata, Koirala, Nikesh, Xu, Su-Yang, Neupane, Madhab, Liu, Chang, Hasan, M. Zahid, Oh, Seongshik
Publikováno v:
Phys. Rev. Lett. 109, 186403 (2012)
By combining transport and photo emission measurements on (Bi1-xInx)2Se3 thin films, we report that this system transforms from a topologically non-trivial metal into a topologically trivial band insulator through three quantum phase transitions. At
Externí odkaz:
http://arxiv.org/abs/1209.2840
Autor:
Jenkins, Gregory S., Sushkov, Andrei B., Schmadel, Don C., Kim, M. -H., Brahlek, Matthew, Bansal, Namrata, Oh, Seongshik, Drew, H. Dennis
Publikováno v:
Phys. Rev. B 86, 235133 (2012)
We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persist
Externí odkaz:
http://arxiv.org/abs/1209.1138
Autor:
Jenkins, Gregory S., Sushkov, Andrei B., Schmadel, Don C., Bichler, Max, Koblmueller, Gregor, Brahlek, Matthew, Bansal, Namrata, Oh, Seongshik, Drew, H. Dennis
Publikováno v:
Phys. Rev. B 87, 155126 (2013)
Gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3 enable the first spectroscopic characterization of a single topological interface state from the vicinity of the Dirac point to above the conduction ba
Externí odkaz:
http://arxiv.org/abs/1208.3881