Laterally resolved electrical characterisation of high-K oxides with non-contact Atomic Force Microscopy

Autor: Sturm, J.M., Zinine, A.I., Wormeester, H., Bankras, R.G., Holleman, J., Schmitz, J., Poelsema, Bene

Publikováno v: In Microelectronic Engineering 17 June 2005 80:78-81

In-situ RHEED Analysis of Atomic Layer Deposition

Autor: Bankras, R.G., Holleman, J., Schmitz, Jurriaan

Publikováno v: Proceedings of 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005, 70-75
STARTPAGE=70;ENDPAGE=75;TITLE=Proceedings of 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005
ISSUE=8;STARTPAGE=70;ENDPAGE=75;TITLE=8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005

Recent efforts on growth modeling of the atomic layer deposition process emphasized the need of an accurate understanding of the process, especially for the initial stage of the deposition. This paper presents results obtained from in-situ RHEED meas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::246a6ef42b6fa2316bba8b2e483d20c1
https://research.utwente.nl/en/publications/insitu-rheed-analysis-of-atomic-layer-deposition(08606d39-b26c-45e0-a365-de6475c37b05).html

XPS and SPM characterization of ALD grown thin Al2O3 layers

Autor: Zinine, A., Sturm, Jacobus Marinus, Wormeester, Herbert, Poelsema, Bene, Bankras, R.G., Aarnink, W.A.M., Holleman, J., Schmitz, Jurriaan

Publikováno v: AVS International Conference on Atomic Layer Deposition, ALD 2004

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::0c1f9bfd5fd3ee66d1da344437bd55f5
https://research.utwente.nl/en/publications/d2e482ed-0cce-454e-94ea-5c6ef8e7bd6d

In-situ RHEED analysis of atomic layer deposition and characterization of Al203 gate dielectrics

Autor: Bankras, R.G., Aarnink, Antonius A.I., Holleman, J., Schmitz, Jurriaan

Publikováno v: ISSUE=6;STARTPAGE=726;ENDPAGE=729;TITLE=6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
Proceedings of Semiconductor Advances for Future Electronics SAFE 2003

A new custom designed reactor was realized at the MESA+ cleanroom to fabricate high-k dielectrics using atomic layer deposition (ALD). Key features of the reactor are: a small reactor volume, in-situ RHEED analysis and low background pressure. The ef

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3f1c9e7c812fa72bace71515d4819801
https://research.utwente.nl/en/publications/insitu-rheed-analysis-of-atomic-layer-deposition-and-characterization-of-al203-gate-dielectrics(60b3e215-8151-45e8-aaa7-9305e9c22186).html

Characterization of pulsed laser deposited Al2O3 gate dielectric

Autor: Bankras, R.G., Holleman, J., Woerlee, P.H.

Publikováno v: ISSUE=5;STARTPAGE=1;ENDPAGE=4;TITLE=5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002

The demands of future CMOS devices require a new gate dielectric material with higher dielectric constant than SiO2. Aluminum oxide is one of the high-k materials and an interesting candidate.Thin Al2O3 layers have been deposited by pulsed laser depo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::5e98fd1f248417add95236e175052a36
https://research.utwente.nl/en/publications/characterization-of-pulsed-laser-deposited-al2o3-gate-dielectric(27ab4547-c3e0-4fc1-92d5-e636a4a2ec05).html