Zobrazeno 1 - 10 of 44 pro vyhledávání: '"Banine, V.Y."'
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Akademický článek
Lithography for now and the future
Autor: van de Kerkhof, M.A., Benschop, J.P.H., Banine, V.Y.
Publikováno v: In Solid State Electronics May 2019 155:20-26
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2
Ion fluxes and energies increase with pressure in EUV-induced H2 plasmas
Autor: van de Ven, T.H.M., Reefman, P., de Meijere, C.A., van der Horst, Ruud, Banine, V.Y., Beckers, J.
Publikováno v: ISSUE=69;TITLE=69th Annual Gaseous Electronics Conference (GEC 2016), October 10-14, 2016, Bochum, Germany
The next-generation lithography tools currently use Extreme Ultraviolet (EUV) radiation to create even smaller features on computer chips. Wherever the light travels, the high energy photons (92 eV) induce a plasma in the low pressure background gas
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::03d045895ca27e9438fea5c1badaf7d6
https://research.tue.nl/nl/publications/5b3b0a03-3958-4679-aed8-981ec2ebfd57
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3
Investigation of ion energy distribution functions in EUV-induced plasmas by ion mass spectrometry
Autor: van de Ven, T.H.M., Reefman, P., Osorio, E.A., Banine, V.Y., Beckers, J.
Publikováno v: 43th IEEE International Conference on Plasma Science (ICOPS 2016), June 19-23, 2016, Banff, Canada
The creation of plasma by direct photo ionization by extreme ultraviolet radiation (EUV, 13.5 nm) is a common phenomenon in extraterrestrial planetary nebulae. However, this process has been difficult to reproduce in a laboratory because of the scarc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::e15d54b7924c53202c6edfd921201151
https://research.tue.nl/nl/publications/e7e21769-7856-4575-a865-c9bef7302649
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6
The temporal evolution of electrons in EUV-induced plasmas
Autor: Horst, van der, R.M., Beckers, J., Osorio, E.A., Banine, V.Y.
Publikováno v: Proceedings of the 32st International Conference of Plasmas and Ionized Gases
We studied the temporal evolution of the electron density in a low pressure pulsed plasma induced by high energy photons (92 eV) by means of microwave cavity resonance spectroscopy (MCRS). Although MCRS generates space averaged information about the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::00680348760eabf0e058016c1352e812
https://research.tue.nl/nl/publications/687bc4d6-f2cf-4891-884e-d35d8a523e41
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9
Atomic-hydrogen cleaning of Sn from Mo/Si and DLC/Si extreme ultraviolet multilayer mirrors
Autor: Soer, W.A., Herpen, M.M.J.W. van, Jak, M.J.J., Gawlitza, P., Braun, S., Salashchenko, N.N., Chkhalo, N.I., Banine, V.Y.
We have investigated the use of atomic-hydrogen-based cleaning to remove Sn contamination from extreme ultraviolet (EUV) multilayer mirrors. Mo and Si surfaces were cleaned at a relatively slow rate due to catalyzed dissociation of tin hydride on the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______610::48ee86e78037dc90b717919a6da0bf98
https://publica.fraunhofer.de/handle/publica/229248
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