Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Bang-Ren Chen"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract This study demonstrates a novel use of the U-Net convolutional neural network (CNN) for modeling pixel-based electrostatic potential distributions in GaN metal–insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with var
Externí odkaz:
https://doaj.org/article/d57d1e5a071d44e0877f3e71703ba9b8
Publikováno v:
IEEE Access, Vol 11, Pp 70168-70173 (2023)
In this work, the methodology using Graph Attention Network (GAT) for the reserve design in GaN power MIS-HEMTs based on hand-drawn characteristics is demonstrated for the first-time. The hand-drawn ID-VG characteristic is constructed by Ramer-Dougla
Externí odkaz:
https://doaj.org/article/5685da3d39fc4d90a1a3d008a5cb023a
In this work, the methodology for the reserve design in GaN power MIS-HEMTs based on hand-drawn characteristics is demonstrated for the first-time using Graph Attention Network. The hand-drawn ID-VG characteristic is constructed by Ramer-Douglas-Peuc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05c28e33c3761cca68ca6b34a1d94d8c
https://doi.org/10.21203/rs.3.rs-2546101/v1
https://doi.org/10.21203/rs.3.rs-2546101/v1
