Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Bang-Lin Lee"'
Publikováno v:
Journal of Flexible and Printed Electronics. 1:111-118
Here, we report investigations of the effects of bias stress on the density of states (DOS) in polymer thin-film transistors (PTFTs). As the active channel layer, these PTFTs employed an inkjet-printed semiconducting film of P8T2Z-C12 [poly (tetryldo
Autor:
Kwak Yoon Hyun, Seung Yeon Kwak, So-Yeon Kim, Dmitry Kravchuk, Bang Lin Lee, Yong Suk Cho, Sukekazu Aratani, Hyun Koo, Sunghun Lee, Sunghan Kim, Ji Youn Lee, Byoung Ki Choi, Jong-Won Choi, Myung Sun Sim, Kyu Hyun Im
Publikováno v:
SID Symposium Digest of Technical Papers. 51:699-702
Autor:
Byoung Ki Choi, Sunghan Kim, Hyun Koo, Seung-Yeon Kwak, Sunghun Lee, Kyu Young Hwang, Yoon-Hyun Kwak, Jeoung-In Yi, Kim Sangdong, Hong Seok-Hwan, Bang Lin Lee, Sangho Park, Myung Sun Sim, Ohyun Kwon, Hyeonho Choi
Publikováno v:
SID Symposium Digest of Technical Papers. 51:281-284
Autor:
Minjung Jin, Soonwan Kwon, Taiki Uemura, Y. Kim, J.M. Park, Hwa-Sung Rhee, Young-Joon Cho, Mi-Hyang Lee, Bomi Kim, Kihyun Choi, Tae-Young Jeong, Myeong-cheol Kim, Hyewon Shim, Hai Jiang, Hyunchul Sagong, K. Kim, Won-Jin Kim, Hyeonwoo Nam, D. Mun, Sangwoo Pae, E. Kwon, Myungsoo Yeo, Bang-Lin Lee
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
The product reliability of 7nm FinFET technology is demonstrated with 5G SoC platform. RO aging and other highspeed operating 5G IPs show an expected reliability model behavior, which has further improvement of frequency noise reduction through 3-pla
Autor:
Eun-Kyung Lee, Myung-Sup Jung, Bang-Lin Lee, Young-Nam Kwon, Sunjung Byun, Joo-Young Kim, Ji Whan Kim, Jang-Joo Kim, Jeong-Il Park
Publikováno v:
Journal of Materials Chemistry C. 6:13359-13366
A polymeric insulating material cured at the low temperature of 130 °C through the thermal cross-linking reaction of poly(hydroxy imide) (PHI) and 2,2′-bis(4-(2-(vinyloxy)ethoxy)phenyl)propane (BPA-DEVE) was characterized to determine its applicab
Autor:
Insil Choi, Do Hwan Kim, Roger Häusermann, Jong Won Chung, Il Won Kim, Sang Yoon Lee, Jeong Il Park, Jiyoul Lee, Sang Soo Lee, Bang Lin Lee, Moon Sung Kang, Bertram Batlogg
Publikováno v:
Journal of the American Chemical Society. 137:7990-7993
We report the observation of band-like transport from printed polymer thin films at room temperature. This was achieved from donor-acceptor type thiophene-thiazole copolymer that was carefully designed to enhance the planarity of the backbone and the
Autor:
Young Ki Hong, Yeong Hwan Ko, Hoyoung Tang, Wongeon Song, Yong-wan Jin, Jeong Il Park, Jong Won Chung, Jiyoul Lee, Chulseung Jung, Sunkook Kim, Min Hyung Lee, Jongsun Park, Bang Lin Lee, Sang Yoon Lee, Jae Su Yu
Publikováno v:
Organic Electronics. 15:3038-3042
We report a novel platform on which we design a flexible high-performance complementary metal–oxide–semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS 2 ) NMOS on
Publikováno v:
Organic Electronics. 15:2021-2026
To reduce the contact resistance in inkjet-printed organic thin-film transistors (OTFTs), the use of a newly synthesized ionic self-assembled monolayer (SAM) consisting of an anchoring group, a linker group, and an ionic functional group, is investig
Publikováno v:
RSC Adv.. 4:293-300
Poly(N-(4-hydroxyphenyl)maleimide-co-4-vinylphenol) (PHPMIVP) and its derivatives were developed for polymer gate dielectrics exhibiting high chemical resistance to various organic solvents and hysteresis-free operations in FET. PHPMIVP were modified
Autor:
Jong Won Chung, Myung Hoon Jung, Do Hwan Kim, Byungkwon Song, Byung-Wook Yoo, Bang Lin Lee, Joo-Young Kim, Bonwon Koo, Jung Woo Kim, Jiyoul Lee, Jeong Il Park, Yong Wan Jin, Seongil Im, Jae Eun Jang, Sang Yoon Lee, Joon Seok Park, Ji Young Jung
Publikováno v:
Advanced Materials. 25:5886-5892
Stable uniform performance inkjet-printed polymer transistor arrays, which allow demonstration of flexible full-color displays, were achieved by new ambient processable conjugated copolymer semiconductor, and OTFT devices incorporating this material