Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Bang-Ching Ho"'
Publikováno v:
ECS Transactions. 52:259-265
EUV lithography is one of the next generation lithography candidates for hp22nm and beyond. However the light source, tools, masks and resists are still the key issues for the EUV lithography. For the development of the EUV light source, the low powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e24e93fdd159ce06abcd097595bc270
https://doi.org/10.1149/05201.0259ecst
https://doi.org/10.1149/05201.0259ecst
Publikováno v:
ECS Transactions. 34:257-262
For the next generation lithography (NGL), several technologies have been proposed to achieve the 22nm-node devices and beyond. Extreme ultraviolet (EUV) lithography is one of the candidates for the next generation lithography. For lithography proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14e082f3a66a41e397adb548b4afaec4
https://doi.org/10.1149/1.3567590
https://doi.org/10.1149/1.3567590
Autor:
Masakazu Kato, Shigeo Kimura, Daisuke Maruyama, Bang-Ching Ho, Rikimaru Sakamoto, Tomohisa Ishida, Noriaki Fujitani, Ryuji Onishi, Yoshiomi Hiroi, Endo Takafumi
Publikováno v:
ECS Transactions. 27:479-487
Double patterning process with ArF immersion lithography has been developed as one of the most promising candidate for hp32 node and beyond. However complicated process flow and cost of ownership are the critical issue for this process. LELE (Litho-E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84dd5f289f3e23ac6528833a5e427d27
https://doi.org/10.1149/1.3360663
https://doi.org/10.1149/1.3360663
Autor:
Yaguchi Hiroaki, Bang-Ching Ho, Chun-Yen Huang, Yasushi Sakaida, Dennis Shu-Hao Hsu, Daisuke Maruyama, Walter Wang, Chiang-Lin Shih, S. Sassa, Wen-Bin Wu, Rikimaru Sakamoto
Publikováno v:
Journal of Photopolymer Science and Technology. 23:193-198
Sidewall process has been proposed as one of the acceptable self aligned double patterning technologies (SADPT). In this study, carbon rich spin-on sidewall (SoS) materials have been investigated. And the possibility of applying them in novel double
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c22e9b8b2b9d91bb260229638c814428
https://doi.org/10.2494/photopolymer.23.193
https://doi.org/10.2494/photopolymer.23.193
Publikováno v:
ECS Transactions. 18:409-417
193nm immersion and Hyper NA lithography are used at 45nm and beyond. The next generation of lithography will use a new technology such as Double Pattering, EUV or EB. Double patterning is one of the currently acceptable technologies. Three common do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebc53f32d8f70e8fc089bca17ea9274d
https://doi.org/10.1149/1.3096479
https://doi.org/10.1149/1.3096479
Publikováno v:
Journal of Photopolymer Science and Technology. 21:451-455
The density, absorbance, and outgassing of underlayer films and the effect of EUV irradiation on such films were evaluated. The relationship between density and calculated EUV absorbance was determined. Films having lower film density have lower EUV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0e3f4d9803967b0e16afa3a4df8b46
https://doi.org/10.2494/photopolymer.21.451
https://doi.org/10.2494/photopolymer.21.451
Autor:
H. Komano, Bang-Ching Ho, Chao-Ying Yu, Jen-Chieh Shih, Dah-Chung Owe-Yang, Tin-Yu Lee, R. Hayashi, Takeshi Iwai, T. Hirayama, Meei-Yu Hsui
Publikováno v:
Journal of Photopolymer Science and Technology. 17:541-544
For the enhancement of the Lithography Technology, photo-resist performance, especially in base polymer, has important rules. Currently, in ArF lithography, base polymer of poly-acrylate has been widely selected, but the performance especially in con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca448f7cd8d109166921215649db5e06
https://doi.org/10.2494/photopolymer.17.541
https://doi.org/10.2494/photopolymer.17.541
Publikováno v:
Journal of Photopolymer Science and Technology. 16:483-487
One of the major components of a photoresist formulation is polymer resin. Many resin types including COMA, VEMA, CO and acrylates are being used in 193 nm-photoresist formulation. A set of promising resin candidates for 193 nm lithography consists o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d58c7dc3271763f3981d9ed0484ea1b7
https://doi.org/10.2494/photopolymer.16.483
https://doi.org/10.2494/photopolymer.16.483
Publikováno v:
SPIE Proceedings.
Because the pattern pitch is getting smaller and smaller, the pattern collapse issue in the lithography process have been getting the sever problem. Especially, pattern collapse is one of the main reasons for minimizing of process margin at fine pitc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d1c515ba9278dad5d6c043adb7f5ae
https://doi.org/10.1117/12.2011511
https://doi.org/10.1117/12.2011511
Autor:
Bang-Ching Ho, Nishita Tokio, Endo Takafumi, Ryuji Onishi, Noriaki Fujitani, Rikimaru Sakamoto, Yaguchi Hiroaki
Publikováno v:
SPIE Proceedings.
EUV lithography (EUVL) is the most promising candidate of next generation technology for hp20nm node device manufacturing and beyond. However, the power of light source, masks and photo resists are the most critical issues for driving the EUVL. Espec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00193e0faa3db510ebcc6d07d2db1c5a
https://doi.org/10.1117/12.2011489
https://doi.org/10.1117/12.2011489