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pro vyhledávání: '"Bang Y. Maa"'
Publikováno v:
Journal of Electronic Materials. 24:25-29
We report the results of GaAs grown by vacuum atomic layer epitaxy using trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) as the group III and V sources. The growth rate saturates at one monolayer per cycle for a wide range of growth parameters
Publikováno v:
Journal of Electronic Materials; Jan1995, Vol. 24 Issue 1, p25-29, 5p