Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Bandi Venkata Chandan"'
Publikováno v:
2021 7th International Conference on Signal Processing and Communication (ICSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9c96be5cb67a62b635dd6d4b51c2562
https://doi.org/10.1109/icsc53193.2021.9673223
https://doi.org/10.1109/icsc53193.2021.9673223
Publikováno v:
Micro & Nano Letters. 14:1033-1036
In this work, a distinctive approach for the suppression of ambipolar behaviour of novel polarity control electrically doped hetero tunnel field effect transistor (TFET) has been reported. For this purpose, a wider band gap material, gallium arsenide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3896e19aded2532ae6e2afac7f9bac90
https://doi.org/10.1049/mnl.2018.5598
https://doi.org/10.1049/mnl.2018.5598
Publikováno v:
Journal of Computational Electronics. 18:1201-1206
A comparative investigation has been carried out on the charge plasma tunnel field-effect transistor (CP-TFET) and electrically doped TFET (ED-TFET). Both device structures are created on intrinsic silicon, but differ regarding the method employed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd28d9942f2b97ab742d91ed0ed932a1
https://doi.org/10.1007/s10825-019-01388-2
https://doi.org/10.1007/s10825-019-01388-2
Publikováno v:
IET Circuits, Devices & Systems. 13:787-792
In this editorial, the effect of dual gate underlap has been implemented on ED-TFET and it is named as underlap dual metal gate electrically doped tunnel FET (UL-DMG-ED-TFET). The proposed device has been reviewed in terms of device characteristics a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::678d23375f341762ad88f62c26b20a24
https://doi.org/10.1049/iet-cds.2018.5394
https://doi.org/10.1049/iet-cds.2018.5394
Publikováno v:
Advanced Science, Engineering and Medicine. 11:484-490
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa17223855498a274c92b9b0dbbac2d6
https://doi.org/10.1166/asem.2019.2386
https://doi.org/10.1166/asem.2019.2386
Autor:
Maitreyee Gautami, Bandi Venkata Chandan, Shivendra Yadav, Vinay Anand Tikkiwal, Dheeraj Sharma, Kaushal Nigam, Satyendra Kumar
Publikováno v:
Journal of Computational Electronics. 18:76-82
To achieve a steep subthreshold slope (SS) and a better $$I_\mathrm{ON}/I_\mathrm{OFF}$$ ratio is a major concern for switching applications in semiconductor devices. To overcome these issues, the tunnel field effect transistor (TFET) is a promising
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84fcdf8561adc4ced9b2c0ea6eb2fce7
https://doi.org/10.1007/s10825-018-1280-z
https://doi.org/10.1007/s10825-018-1280-z
Publikováno v:
Micro & Nano Letters. 13:684-689
This work reports a dual metal bipolar gate-based electrically doped tunnel field-effect transistor (DMBG-ED-TFET) which overcomes the ambipolarity issue and gives improved radio frequency (RF) and linearity metrics. The formations of n + , p + drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9947cd745dc3b6049b23b8aca1851a1b
https://doi.org/10.1049/mnl.2017.0814
https://doi.org/10.1049/mnl.2017.0814
Autor:
Dheeraj Sharma, Bandi Venkata Chandan, Mohd. Aslam, Deepak Soni, Neeraj Sharma, Shivendra Yadav
Publikováno v:
Superlattices and Microstructures. 117:9-17
In this article, the impact of gate-underlap with hetero material (low band gap) has been investigated in terms of DC and Analog/RF parameters by proposed device named as hetero material gate-underlap electrically doped TFET (HM-GUL-ED-TFET). Gate-un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e660cbd9432d6b943001835118d05537
https://doi.org/10.1016/j.spmi.2018.02.005
https://doi.org/10.1016/j.spmi.2018.02.005
Publikováno v:
Micro & Nano Letters. 13:452-456
The fabrication complexity and cost effectiveness in nanoscale regime have been one of the major issues in the modern biosensor. Therefore, to overcome such issue, this study investigates a junctionless dielectrically modulated electrically doped tun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::113d64a3ea517c9c6e66f3cc6899c85c
https://doi.org/10.1049/mnl.2017.0580
https://doi.org/10.1049/mnl.2017.0580
Publikováno v:
Applied Physics A. 125
In this research, to achieve steep subthreshold slope, high $${I}_\mathrm{{on}}/{I}_\mathrm{{off}}$$ ratio and low ambipolarity in TFETs, we have proposed a device which consists of metal strips near drain–channel and source–channel interfaces. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc2a6752759b2012c65ab0f0dbe70bea
https://doi.org/10.1007/s00339-019-2966-1
https://doi.org/10.1007/s00339-019-2966-1