Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Ban Da-Yan"'
Publikováno v:
Chinese Physics Letters. 14:609-612
By using synchrotron radiation photoelectron spectroscopy, the band lineup of Ge/CdTe(111) interfaces grown at different temperatures have been measured. Experimental studies show that the valence band offset of Ge/CdTe(111) interface grown at room t
Publikováno v:
Acta Physica Sinica (Overseas Edition). 5:590-600
The microscopic evolution of interface formation between Ge and II-VI compounds such as ZnSe and ZnS single crystals has been studied by synchrotron radiation photoemission spectroscopy and low energy electron diffraction. Core level intensity measur
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 80:197-200
The band lineup at the Ge/ZnS(111) interface has been studied by synchroton radiation photoemission spectroscopy. The experimental results indicate that the deposition of Ge films by evaporation is a two-dimensional growth at the initial stage. With
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 80:193-196
The formation and band lineup of the Ge/ZnSe(100) interface have been studied by synchrotron radiation photoemission spectroscopy. Core level intensity measurements from the ZnSe substrate as well as from the Ge overlayer show a two-dimensional depos
Publikováno v:
Chinese Physics Letters. 14:128-130
Using linear muffin-tin orbitals method with atomic sphere approximation, the interface electronic structure of Ge/ZnSe(111) has been studied. The density of states, local density of states as well as local partial density of states are presented. Th
Publikováno v:
Acta Physica Sinica. 46:767
By using the Linear Muffin-Tin Orbital (LMTO) method and synchrotron radiation photoemission,the electronic structure and surface stability of ZnSe(100) nonreconstruction surface,c(2×2) undimerized and c(2×2) dimerized reconstruction surfaces have
Publikováno v:
Acta Physica Sinica. 46:587
The band lineup of a Ge/ZnSe(100) polar interface has been studied by synchrotron radiation photoemission spectroscopy.Surface sensitive core level spectra indicate that Ge atoms in the overlayer can react with Se atoms at the interface.The valence b
Publikováno v:
Acta Physica Sinica. 46:1817
Synchrotron radiation photoelectron spectroscopy is used to measure the valence-band offsets for Si/ZnS(111) and (100) heterojunctions. The valence band discontinuities obtained from the measurements are both (1.9±0.1)eV for Si/ZnS(111) and Si/ZnS(1
Publikováno v:
Acta Physica Sinica. 45:2047
The electronic structure of CdTe(111) surfaces with adsorbed alkali metals has been explored by synchrotron radiation and LMTO method. The experimental results showed that the surface states were redistributed when K-adsorbed and Fermi-pinning phenom
Publikováno v:
Acta Physica Sinica. 45:1526
By using the linear muffin-tin orbital (LMTO) method, the surface electronic structure of ZnS(111) slab model is calculated, the total, local and partial densities of states for these models are presented. The structure stability and surface state ar