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pro vyhledávání: '"Bals S."'
Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique with high s
Externí odkaz:
http://arxiv.org/abs/2106.08478
Publikováno v:
In Ultramicroscopy May 2023 247
Akademický článek
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Autor:
Boschker, H, Huijben, M, Vailionis, A, Verbeeck, J, van Aert, S, Luysberg, M, Bals, S, van Tendeloo, G, Houwman, E P, Koster, G, Blank, D H A, Rijnders, G
In this article, an overview of the fabrication and properties of high quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, whi
Externí odkaz:
http://arxiv.org/abs/1103.2267
Autor:
Huijben, M., Koster, G., Kruize, M. K., Wenderich, S., Verbeeck, J., Bals, S., Slooten, E., Shi, B., Molegraaf, H. J. A., Kleibeuker, J. E., van Aert, S., Goedkoop, J. B., Brinkman, A., Blank, D. H. A., Golden, M. S., van Tendeloo, G., Hilgenkamp, H., Rijnders, G.
The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the
Externí odkaz:
http://arxiv.org/abs/1008.1896
Autor:
Werner, R., Raisch, C., Leca, V., Ion, V., Bals, S., Van Tendeloo, G., Chassé, T., Kleiner, R., Koelle, D.
Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at $720 ^\circ$C and oxygen pressure $p_{O_2}=1-25 $Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the formation of Ce
Externí odkaz:
http://arxiv.org/abs/0811.4710
Autor:
Huijben, M., Rijnders, G., Blank, D. H. A., Bals, S., Van Aert, S., Verbeeck, J., Van Tendeloo, G., Brinkman, A., Hilgenkamp, H.
Perovskite oxides exhibit a plethora of exceptional electronic properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Stu
Externí odkaz:
http://arxiv.org/abs/cond-mat/0603088
We have studied the evolution of the structural modulation in epitaxial, c-axis oriented, Bi2Sr2-xLaxCuO6+d thin films when varying the La content x and for a given x as a function of oxygen content. A series of thin films with 0
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503459
Publikováno v:
In Ultramicroscopy June 2017 177:36-42
Autor:
Huybrechts, W., Mali, G., Kuśtrowski, P., Willhammar, T., Mertens, M., Bals, S., Van Der Voort, P., Cool, P.
Publikováno v:
In Microporous and Mesoporous Materials 1 December 2016 236:244-249