Zobrazeno 1 - 10
of 120
pro vyhledávání: '"Balkan, Naci"'
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2003 17:610-612
Autor:
Sceats, Russell, Dyson, Angela, J. Hepburn, Carl, J. Potter, Richard, Boland-Thoms, Adrian, Balkan, Naci *, Hill, Geoff, C. Button, Chris, Pinches, Steve
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2003 17:607-609
Autor:
Hugues Maxime, Hopkinson Mark, Chaqmaqchee Faten, Mazzucato Simone, Oduncuoglu Murat, Balkan Naci, Sun Yun, Gunes Mustafa
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 104 (2011)
Abstract Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be de
Externí odkaz:
https://doaj.org/article/6f6ff4faa97d4601ac4515b639a3c916
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 191 (2011)
Abstract Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applie
Externí odkaz:
https://doaj.org/article/7afe922a2777432fbcdf16dccb1ee0ed
Autor:
Sung-Hoon Chung1, Balkan, Naci1 balkan@essex.ac.uk
Publikováno v:
Optical & Quantum Electronics. Mar2006, Vol. 38 Issue 4-6, p513-521. 9p. 1 Diagram, 1 Chart, 5 Graphs.
Autor:
Lisesivdin, Sefer Bora, Khan, Nadir Ali, Mazzucato, Simone, Balkan, Naci, Adams, Michael John, Korpijarvi, Ville-Markus, Guina, Mircea, Mezosi, Gabor, Sorel, Marc
We report the observation of room-temperature optical gain at 1.3 mu m in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r39c86a4b39b::3774a4d944a72d34a54f49dc3bfe90e6
https://aperta.ulakbim.gov.tr/record/63383
https://aperta.ulakbim.gov.tr/record/63383
Autor:
Balkan, Naci, Adams, Michael John, Mazzucato, Simone, Khan, Nadir Ali, LİŞESİVDİN, SEFER BORA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_____10046::bbbef2f20fba499a6505faee625c241a
https://avesis.gazi.edu.tr/publication/details/2ee33f30-6938-4745-8fe0-7285f7d7d9cd/oai
https://avesis.gazi.edu.tr/publication/details/2ee33f30-6938-4745-8fe0-7285f7d7d9cd/oai
Akademický článek
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WOS: 000305071800024
The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been studied using infrared (IR) and Raman scattering spectroscopy at room temperature. In the Raman measurements, the 532?nm (2.
The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been studied using infrared (IR) and Raman scattering spectroscopy at room temperature. In the Raman measurements, the 532?nm (2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ba85ec5530439cfffecb2b2e736e943c
https://aperta.ulakbim.gov.tr/record/83575
https://aperta.ulakbim.gov.tr/record/83575
Autor:
Chaqmaqchee, Faten Adel Ismail, Mazzucato, Simone, Oduncuoglu, Murat, Balkan, Naci, Sun, Yun, Gunes, Mustafa, Hugues, Maxime, Hopkinson, Mark
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r39c86a4b39b::7bff056134ddea5c65d49202badf38f6
https://aperta.ulakbim.gov.tr/record/23093
https://aperta.ulakbim.gov.tr/record/23093