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Magnetic sensitivity distribution of Hall devices in antiferromagnetic switching experiments

Autor: Schreiber, F., Meer, H., Schmitt, C., Ramos, R., Saitoh, E., Baldrati, L., Kläui, M.

Publikováno v: Phys. Rev. Applied 16, 064023 (2021)

We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-termi

Externí odkaz: http://arxiv.org/abs/2201.01572

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Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO

Autor: Barra, A., Ross, A., Gomonay, O., Baldrati, L., Chavez, A., Lebrun, R., Schneider, J. D., Shirazi, P., Wang, Q., Sinova, J., Carman, G. P., Kläui, M.

As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without

Externí odkaz: http://arxiv.org/abs/2103.13105

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Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism

Autor: Meer, H., Schreiber, F., Schmitt, C., Ramos, R., Saitoh, E., Gomonay, O., Sinova, J., Baldrati, L., Kläui, M.

We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineere

Externí odkaz: http://arxiv.org/abs/2008.05219

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Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$

Autor: Hajiri, T, Baldrati, L., Lebrun, R., Filianina, M., Ross, A., Tanahashi, N., Kuroda, M., Gan, W. L., Menteş, T. O., Genuzio, F., Locatelli, A., Asano, H, Kläui, M.

Publikováno v: J. Phys.: Condens. Matter 31, 445804 (2019)

We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism ph

Externí odkaz: http://arxiv.org/abs/1907.05561

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Electrically controlled long-distance spin transport through an antiferromagnetic insulator

Autor: Lebrun, R., Ross, A., Bender, S. A., Qaiumzadeh, A., Baldrati, L., Cramer, J., Brataas, A., Duine, R. A., Kläui, M.

Publikováno v: Nature 561, 222-225 (2018)

Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the long-distanc

Externí odkaz: http://arxiv.org/abs/1805.02451

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Ferroelectricity and Rashba effect in GeTe

Autor: Rinaldi, C., Di Sante, D., Giussani, A., Wang, R. -N., Bertoli, S., Cantoni, M., Baldrati, L., Vobornik, I., Panaccione, G., Calarco, R., Picozzi, S., Bertacco, R.

Publikováno v: Advanced Materials 28, 560 (2016)

GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors. In nice agreement with first principle calculations, we show by angu

Externí odkaz: http://arxiv.org/abs/1412.2386

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