Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions

Autor: Lin, Euing, Guo, Ted, Chien, C.C., Chang, M.H., Yu, Wesley, Yang, N.H., Lin, J.F., Wu, J.Y., Robb, Kenneth M., Baldaro, Alessandro, Other, A.N.

Publikováno v: Diffusion and Defect Data Part B: Solid State Phenomena; September 2014, Vol. 219 Issue: 1 p78-80, 3p