Zobrazeno 1 - 10
of 5 483
pro vyhledávání: '"Balandin, A. A."'
Autor:
Wright, Dylan, Mudiyanselage, Dinusha Herath, Guzman, Erick, Fu, Xuke, Teeter, Jordan, Da, Bingcheng, Kargar, Fariborz, Fu, Houqiang, Balandin, Alexander A.
We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used t
Externí odkaz:
http://arxiv.org/abs/2408.06951
Autor:
Geremew, Tekwam, Taheri, Maedeh, Sesing, Nicholas, Ghosh, Subhajit, Kargar, Fariborz, Salguero, Tina T., Balandin, Alexander A.
We report on the solution processing and testing of electronic ink comprised of quasi-one-dimensional NbS$_3$ charge-density-wave fillers. The ink was prepared by liquid-phase exfoliation of NbS$_3$ crystals into high-aspect ratio quasi-1D fillers di
Externí odkaz:
http://arxiv.org/abs/2404.09038
Autor:
Wright, Dylan, Nataj, Zahra Ebrahim, Guzman, Erick, Polster, Jake, Bouman, Menno, Kargar, Fariborz, Balandin, Alexander A.
We report the results of the investigation of the acoustic and optical phonons in quasi-two-dimensional antiferromagnetic semiconductors of the transition metal phosphorus trisulfide family with Mn, Fe, Co, Ni, and Cd as metal atoms. The Brillouin-Ma
Externí odkaz:
http://arxiv.org/abs/2402.18801
Autor:
Hou, Songrui, Pan, Fengjiao, Shi, Xinping, Nataj, Zahra Ebrahim, Kargar, Fariborz, Balandin, Alexander A., Cahill, David G., Li, Chen, Ren, Zhifeng, Wilson, Richard B.
Materials with high thermal conductivity are needed to conduct heat away from hot spots in power electronics and optoelectronic devices. Cubic boron arsenide (c-BAs) has a high thermal conductivity due to its special phonon dispersion relation. Previ
Externí odkaz:
http://arxiv.org/abs/2402.00248
We investigated low-frequency current fluctuations, i.e. electronic noise, in FePS3 van der Waals, layered antiferromagnetic semiconductor. The noise measurements have been used as noise spectroscopy for advanced materials characterization of the cha
Externí odkaz:
http://arxiv.org/abs/2401.12432
Low-frequency electronic noise in charge-density-wave van der Waals materials has been an important characteristic, providing information about the material quality, phase transitions, and collective current transport. However, the noise sources and
Externí odkaz:
http://arxiv.org/abs/2312.16359
Autor:
Nataj, Zahra Ebrahim, Kargar, Fariborz, Krylyuk, Sergiy, Debnath, Topojit, Taheri, Maedeh, Ghosh, Subhajit, Zhang, Huairuo, Davydov, Albert V., Lake, Roger K., Balandin, Alexander A.
We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe$_4$ and TaTe$_4$ van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to
Externí odkaz:
http://arxiv.org/abs/2311.02724
We report on the field-effect modulation of the charge-density-wave quantum condensate in the top-gated heterostructure devices implemented with quasi-one-dimensional NbS$_3$ nanowire channels and quasi-two-dimensional h-BN gate dielectric layers. Th
Externí odkaz:
http://arxiv.org/abs/2310.19027
Autor:
Ghosh, Subhajit, Mudiyanselage, Dinusha Herath, Kargar, Fariborz, Zhao, Yuji, Fu, Houqiang, Balandin, Alexander A.
We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at eleva
Externí odkaz:
http://arxiv.org/abs/2307.15659
Autor:
Guzman, Erick, Kargar, Fariborz, Patel, Avani, Vishwakarma, Saurabh, Wright, Dylan, Wilson, Richard B., Smith, David J., Nemanich, Robert J., Balandin, Alexander A.
We report an investigation of the bulk optical, bulk acoustic, and surface acoustic phonons in thin films of turbostratic boron nitride (t-BN) and cubic boron nitride (c-BN) grown on B-doped polycrystalline and single-crystalline diamond (001) and (1
Externí odkaz:
http://arxiv.org/abs/2307.11276