Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Balakrishnam Jampana"'
Autor:
Robert L. Opila, Balakrishnam Jampana, Ian T. Ferguson, Conan Weiland, Christiana B. Honsberg
Publikováno v:
Thin Solid Films. 520:6807-6812
We report the change in optical absorption properties of InGaN epilayers around the critical layer thickness determined from X-ray diffraction. Detrimental sub-band gap absorption is observed in InGaN thin films grown beyond the critical layer thickn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bf22a7ea1cc08aa1d427eae829af6c8
https://doi.org/10.1016/j.tsf.2012.07.003
https://doi.org/10.1016/j.tsf.2012.07.003
Autor:
Ian T. Ferguson, Balakrishnam Jampana, Tahir Zaidi, Muhammad Jamil, Andrew Melton, Tianming Xu, Boon S. Ooi, C.L. Tan
Publikováno v:
physica status solidi (a). 207:1895-1899
We report on the growth of unidirectional InN micropyramids by using a simple pattern-free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d521e6cdf56ae0e88b96101951d9977
https://doi.org/10.1002/pssa.200925462
https://doi.org/10.1002/pssa.200925462
Autor:
Christiana B. Honsberg, Robert L. Opila, Ian T. Ferguson, Balakrishnam Jampana, Muhammad Jamil, Nikolai Faleev, Andrew Melton
Publikováno v:
IEEE Electron Device Letters. 31:32-34
The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d33f413d4e184e6f85121566152fd56f
https://doi.org/10.1109/led.2009.2034280
https://doi.org/10.1109/led.2009.2034280
Autor:
Andrew Melton, Tianming Xu, Muhammad Jamil, Tahir Zaidi, Ian T. Ferguson, Balakrishnam Jampana, Sheng Liu
Publikováno v:
SPIE Proceedings.
High quality InGaN-based LEDs have been grown on Si (111) substrates using an Al 2 O 3 transition layer. Freestanding, fabricated LED devices were achieved by removing the Si substrate using selective area wet etching. Conventional device design was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c05545e484d77c13196ffc4f51749717
https://doi.org/10.1117/12.863785
https://doi.org/10.1117/12.863785
Autor:
Ian T. Ferguson, Robert L. Opila, Balakrishnam Jampana, Andrew Melton, Tianming Xu, Christiana B. Honsberg, Muhammad Jamil
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
The III-nitride material system offers substantial potential to develop high-efficiency solar cells. Currently InGaN based solar cells have been demonstrated on sapphire substrate. This substrate expense adds up significantly to the cost of solar cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1af68cb2d3567fed35fc18cf38e51ee
https://doi.org/10.1109/pvsc.2010.5616748
https://doi.org/10.1109/pvsc.2010.5616748
Autor:
Muhammad Jamil, Christiana B. Honsberg, Balakrishnam Jampana, Robert L. Opila, Andrew Melton, Ian T. Ferguson
Publikováno v:
SPIE Proceedings.
In this work InGa 0.85 N p-n homojunction solar cells were grown by MOCVD on GaN/sapphire substrates and fabricated using standard techniques. When illuminated from the backside, these devices showed 65.9% improvement in J SC and 4.4% improvement in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef1bc002043e74d6422be51fb2bf6bb
https://doi.org/10.1117/12.829264
https://doi.org/10.1117/12.829264
Autor:
Robert L. Opila, Christiana B. Honsberg, Balakrishnam Jampana, Ian T. Ferguson, Muhammad Jamil, Andrew Melton
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polariza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d59573301c452c7c37d70bedd3858f09
https://doi.org/10.1109/pvsc.2009.5411402
https://doi.org/10.1109/pvsc.2009.5411402
Autor:
Robert L. Opila, Muhammad Jamil, William E. Fenwick, Nola Li, Ian T. Ferguson, Balakrishnam Jampana, Christiana B. Honsberg, Tahir Zaidi, Andrew Melton
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
In this report we present recent results for MOCVD growth of high indium content InGaN films on ZnO substrates. Growth was attempted on both bulk ZnO as well as ZnO epilayers grown on sapphire by MOCVD. ZnO is an attractive alternative substrate for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31627c3a93f6a6d4ab4075dbb62c1b50
https://doi.org/10.1109/pvsc.2009.5411216
https://doi.org/10.1109/pvsc.2009.5411216
Autor:
Ian T. Ferguson, Christiana B. Honsberg, Nikolai Faleev, Robert L. Opila, Balakrishnam Jampana
Publikováno v:
MRS Proceedings. 1167
Crystalline perfection of InGaN epi-layers is the missing design parameter for InGaN solar cells. Structural deterioration of InGaN epi-layers depends on the thickness, composition and growth conditions as well. Increasing the InGaN epi-layer thickne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef6602f3035d9a33ed325309bafdd19
https://doi.org/10.1557/proc-1167-o07-04
https://doi.org/10.1557/proc-1167-o07-04
Publikováno v:
MRS Proceedings. 1167
Strong polarization effects observed in III-nitride materials can invert the surface carrier type. The corresponding band bending can be used to design InGaN solar cells. Similar surface inversion was observed in the past with silicon-based Schottky-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8db42747e3982faa14a26a72a74db5
https://doi.org/10.1557/proc-1167-o01-04
https://doi.org/10.1557/proc-1167-o01-04