Zobrazeno 1 - 10
of 193
pro vyhledávání: '"Balaji Raghothamachar"'
Autor:
Gil Chung, Robert Viveros, Charles Lee, Andrey Soukhojak, Vladimir Pushkarev, Qian Yu Cheng, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Defect and Diffusion Forum. 425:51-56
Correlation of X-ray topography and production line defect inspection tools has demonstrated the capability of in-line tools to differentiate between geometrically comparable basal plane slip bands (BPSB) and bar stacking faults (BSF) on 4H SiC wafer
Autor:
Hong Yu Peng, Ya Fei Liu, Ze Yu Chen, Qian Yu Cheng, Shan Shan Hu, James Watson, Kristin Sampayan, Stephen Sampayan, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Defect and Diffusion Forum. 425:43-49
A highly efficient, high-voltage power switching technology, the Optical Transconductance Varistor (OTV) is being developed based on the photoconductive property of 6H-SiC. The behavior of the dislocations in 6H-SiC under the application of voltage a
Autor:
Shan Shan Hu, Shuai Fang, Ya Fei Liu, Qian Yu Cheng, Hong Yu Peng, Ze Yu Chen, Yu Han Gao, Chao Gao, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Materials Science Forum. 1089:45-50
In 4H-silicon carbide crystals, basal plane slip is the predominant deformation mechanism. However, prismatic slip is often observed in single crystals grown by the physical vapor transport method as the diameter expands to 6 inches or larger. Therma
Publikováno v:
ECS Transactions. 111:117-131
The study of defects and strain in GaN substrates and epilayers for vertical device development using synchrotron X-ray topography techniques is presented. Synchrotron monochromatic beam X-ray topography (SMBXT) studies show that ammonothermal-grown
Autor:
Ya Fei Liu, Hong Yu Peng, Ze Yu Chen, Qian Yu Cheng, Shan Shan Hu, Balaji Raghothamachar, Michael Dudley, Ramon Collazo, Zlatko Sitar, James Tweedie, Michal Bockowski, Vincent Meyers, F. Shadi Shahedipour-Sandvik, Bing Jun Li, Jung Han
Publikováno v:
Materials Science Forum. 1062:351-355
Synchrotron X-ray topography techniques are used to characterize the microstructures in gallium nitride materials being developed for selective area doping for power electronic applications. Bulk substrates grown by different methods, epitaxial layer
Autor:
Qian Yu Cheng, Hong Yu Peng, Shan Shan Hu, Ze Yu Chen, Ya Fei Liu, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Materials Science Forum. 1062:366-370
Understanding the depth from which contrast from dislocations is still discernible (the effective penetration depth of the X-rays) in grazing-incidence synchrotron monochromatic beam X-ray topography is of great interest as it enables three-dimension
Autor:
Ze Yu Chen, Hong Yu Peng, Ya Fei Liu, Qian Yu Cheng, Shan Shan Hu, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly, Peter Thieberger
Publikováno v:
Materials Science Forum. 1062:361-365
4H-SiC wafers with 12 um epilayer were implanted at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy from 13 MeV up to 66 MeV. Lattice strains introduced by the implantation process were characterized in detail
Autor:
Hong Yu Peng, Ze Yu Chen, Ya Fei Liu, Qian Yu Cheng, Shan Shan Hu, Xian Rong Huang, Lahsen Assoufid, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Materials Science Forum. 1062:356-360
Synchrotron monochromatic beam X-ray topography has been widely applied to characterize structural defects in SiC crystals. Using ray tracing simulations, the dislocation contrast in X-ray topography under strong diffraction conditions (diffraction t
Autor:
Hongyu Peng, Zeyu Chen, Yafei Liu, Balaji Raghothamachar, Xianrong Huang, Lahsen Assoufid, Michael Dudley
Publikováno v:
Journal of Applied Crystallography. 55:544-550
Utilization of an Si(331) beam conditioner together with an Si(111) double-crystal monochromator (DCM) enables the angular resolution of synchrotron X-ray topography to be increased by an order of magnitude compared with grazing-incidence topography
Autor:
Michael Dudley, Balaji Raghothamachar
Publikováno v:
Wide Bandgap Semiconductors for Power Electronics. :169-197