Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Balaji Manavaimaran"'
Autor:
Wolfhard Oberhausen, Iaroslav Lubianskii, Gerhard Boehm, Axel Strömberg, Balaji Manavaimaran, Dominik Burghart, Yan-Ting Sun, Mikhail A. Belkin
Publikováno v:
APL Photonics, Vol 8, Iss 9, Pp 091303-091303-7 (2023)
Terahertz quantum cascade laser sources based on intra-cavity Cherenkov difference-frequency generation in dual-wavelength mid-infrared quantum cascade lasers are currently the only monolithic semiconductor laser technology that can deliver continuou
Externí odkaz:
https://doaj.org/article/0132a6af732449b6965f47f54d2c1d87
Autor:
Balaji Manavaimaran, Axel Strömberg, Vladimir L. Tassev, Shivashankar R. Vangala, Myriam Bailly, Arnaud Grisard, Bruno Gérard, Sebastian Lourdudoss, Yan-Ting Sun
Publikováno v:
Crystals, Vol 13, Iss 2, p 168 (2023)
Orientation-patterned gallium phosphide (OP-GaP) has been grown heteroepitaxially on OP gallium arsenide (GaAs) templates using hydride vapor phase epitaxy (HVPE). The effect of OP-GaAs template fabrication methods of epitaxial-inversion and wafer bo
Externí odkaz:
https://doaj.org/article/a93ca5e0fdbf457795cb5a58e31d11b6
Publikováno v:
physica status solidi (a). 220
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2f2d9f0ef8f219b73bec7ebbdbbeb41
https://doi.org/10.1002/pssa.202200623
https://doi.org/10.1002/pssa.202200623
Autor:
Axel Strömberg, Yanqi Yuan, Feng Li, Balaji Manavaimaran, Sebastian Lourdudoss, Peng Zhang, Yanting Sun
Publikováno v:
Catalysts; Volume 12; Issue 11; Pages: 1482
Heteroepitaxial Zn-doped p-GaP was grown on (001) GaAs, (001) Si and (111) Si substrates by hydride vapor phase epitaxy for solar-driven photoelectrochemical applications of hydrogen generation by water splitting and CO2 reduction. Growth of GaP on S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a81d5a00ac4d1dfc293318914358184a
https://doi.org/10.3390/catal12111482
https://doi.org/10.3390/catal12111482
Publikováno v:
physica status solidi (b). 259:2100362
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ee18969dd418252f5f691003c4e8a42
https://doi.org/10.1002/pssb.202100362
https://doi.org/10.1002/pssb.202100362
Autor:
Qiye Zheng, Honggyu Kim, Runyu Zhang, Sardela, Mauro, Jianmin Zuo, Balaji, Manavaimaran, Lourdudoss, Sebastian, Yan-Ting Sun, Braun, Paul V.
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 22, p224303-1-224303-8, 8p, 1 Color Photograph, 1 Black and White Photograph, 2 Graphs
Autor:
Balaji Manavaimaran, Baskar Krishnan
Publikováno v:
IETE Technical Review. 33:50-53
Irradiation effects of 120 MeV silicon ion with the fluence of 5 × 1012 ions/cm2 at room temperature and low temperature (77 K) on AlGaN/GaN heterostructures have been studied to probe the radiation tolerance for space applications. XRD results expl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9fea163c9633277933bac1f552b2111
https://doi.org/10.1080/02564602.2015.1043152
https://doi.org/10.1080/02564602.2015.1043152
Autor:
Peretti, Romain, Liverini, Valeria, Süess, Martin J., Liang, Yong, Vigneron, Pierre-Baptiste, Wolf, Johanna M., Bonzon, Christopher, Metaferia, Wondwosen, Balaji, Manavaimaran, Lourdudoss, Sebastian, Gini, Emilio, Beck, Mattias, Faist, Jérôme
Publikováno v:
Laser & Photonics Reviews, 10 (5)
ISSN:1863-8880 ISSN:1863-8899
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______150::68215a0cb3f730fa9bd2a994a7a7b38d
https://hdl.handle.net/20.500.11850/119768
https://hdl.handle.net/20.500.11850/119768
Autor:
V. Liverini, Jérôme Faist, Carl Junesand, Mathieu Carras, M. Beck, Wondwosen Metaferia, Sebastian Lourdudoss, Simon Ferré, B. Simozrag, Balaji Manavaimaran, Romain Peretti
Publikováno v:
Quantum Sensing and Nanophotonic Devices XII.
Buried heterostructure (BH) lasers are routinely fabricated for telecom applications. Development of quantum cascade lasers (QCL) for sensing applications has largely benefited from the technological achievements established for telecom lasers. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c770225fe90b1b59671d613bd76b1fa0
https://doi.org/10.1117/12.2078763
https://doi.org/10.1117/12.2078763
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