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Autor:
Hussain, Hussain, Fadel, Aya, Garcia, Efrain, Saadoon, Zahraa F., Balaji, Adith, Mendez, Luis, Snan, Mhd Ali, Angly, Sohair, Jayakumar, Arumugam R.
Publikováno v:
Bulletin of the National Research Centre; 4/7/2023, Vol. 47 Issue 1, p1-5, 5p
Autor:
Balaji, Adithya
Gallium Nitride (GaN) devices are gaining widespread adoption in high performance power and RF applications. Recently, GaN has gained a lot of attention for its high tolerance to extreme environments. Due to its high displacement energy and bond stre
