Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Bal, Maurice"'
Autor:
Stremoukhov, Pavel, Safin, Ansar, Schippers, Casper F., Lavrijsen, Reinoud, Bal, Maurice, Zeitler, Uli, Sadovnikov, Alexandr, Ilkhchy, Kamyar Saeedi, Nikitov, Sergey, Kirilyuk, Andrei
Antiferromagnetic (AFM) materials possess a well-recognized potential for ultrafast data processing thanks to their intrinsic ultrafast spin dynamics, absence of stray fields, and large spin transport effects. The very same properties, however, make
Externí odkaz:
http://arxiv.org/abs/2211.00353
Autor:
Schippers, Casper Floris, Grzybowski, Michał J., Rubi, Km, Bal, Maurice E., Kools, Thomas J., Duine, Rembert A., Zeitler, Uli, Swagten, Henk J. M.
Publikováno v:
Phys. Rev. B 106, 174434 (2022)
Recent demonstrations of the electrical switching of antiferromagnets (AFs) have given an enormous impulse to the field of AF spintronics. Many of these observations are plagued by non-magnetic effects that are very difficult to distinguish from the
Externí odkaz:
http://arxiv.org/abs/2204.05588
Autor:
Lei, Zijin, Cheah, Erik, Rubi, Km, Bal, Maurice E., Adam, Christoph, Schott, Rüdiger, Zeitler, Uli, Wegscheider, Werner, Ihn, Thomas, Ensslin, Klaus
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly increased mobilit
Externí odkaz:
http://arxiv.org/abs/2110.11002
Autor:
Stremoukhov, Pavel, Safin, Ansar, Schippers, Casper F., Lavrijsen, Reinoud, Bal, Maurice, Zeitler, Uli, Sadovnikov, Alexandr, Kozlova, Elizaveta, Ilkhchy, Kamyar Saeedi, Nikitov, Sergey, Kirilyuk, Andrei
Publikováno v:
In Results in Physics February 2024 57
Autor:
Lei, Zijin, Cheah, Erik, Rubi, Km, Bal, Maurice E., Adam, Christoph, Schott, Rüdiger, Zeitler, Uli, Wegscheider, Werner, Ihn, Thomas Markus, Ensslin, Klaus
Publikováno v:
Physical Review Research, 4 (1)
We report on transport experiments through high-mobility gate-tunable undoped InSb quantum wells (QWs). Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the QWs display a significantly increased m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a72266f44348d2336485471526cbf334
https://hdl.handle.net/20.500.11850/531017
https://hdl.handle.net/20.500.11850/531017