Unidirectional Diagonal Order and 3D Stacking of Charge Stripes in Orthorhombic Pr1.67Sr0.33NiO4 and Nd1.67Sr0.33NiO4

Autor: Huecker, M., Zimmermann, M. v., Klingeler, R., Kiele, S., Geck, J., Bakehe, S. N., Zhang, J. Z., Hill, J. P., Revcolevschi, A., Buttrey, D. J., Buechner, B., Tranquada, J. M.

Publikováno v: Phys. Rev. B 74, 085112 (2006)

The interplay between crystal symmetry and charge stripe order in Pr1.67Sr0.33NiO4 and Nd1.67Sr0.33NiO4 has been studied by means of single crystal x-ray diffraction. In contrast to tetragonal La1.67Sr0.33NiO4, these crystals are orthorhombic. The co

Externí odkaz: http://arxiv.org/abs/cond-mat/0604555

Latest R&D Developments of Thin Film Silicon PV at Oerlikon Solar

Autor: Meier, J., Kroll, U., Benagli, S., Hötzel, J., Bailat, J., Borrello, D., Spitznagel, J., Castens, L., Vallat-Sauvain, E., Dehbozorgi, B., Kluth, O., Kravets, R., Kupich, M., Ellert, C., Bakehe, S., Goldbach, H., Keller, M., Roschek, T., Gossla, M., Knauss, H., Eisenhammer, T., Henz, J.

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 2057-2061
A stabilized record efficiency of 9.1 % for an a-Si:H p-i-n test cell (1 cm2) could be obtained thanks to the enhanced light-trappi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3573ace6a63c129f844a2328ec1725f3

Unidirectional diagonal order and three-dimensional stacking of charge stripes in orthorhombic Pr1.67Sr0.33NiO4 and Nd1.67Sr0.33NiO4

Autor: Hücker, M., Zimmermann, M.V., Klingeler, R., Kiele, S., Geck, J., Bakehe, S., Zhang, J.Z., Hill, J.P., Revcolevschi, A., Buttrey, D.J., Büchner, B.

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2006, 74, pp.085112

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d75504264bd2c06afc825fa4fa954ee8
https://hal.archives-ouvertes.fr/hal-00125061

Optimising the open-circuit voltage of Cu(In,Ga)S2 solar cells—design and analysis

Autor: Klenk, R.¹ klenk@hmi.de, Bakehe, S.¹, Kaigawa, R.², Neisser, A.¹, Reiß, J.¹, Lux-Steiner, M.Ch.¹

Publikováno v: Thin Solid Films. Mar2004, Vol. 451/452, p424. 6p.

The effect of sulphur pressure on the depth distribution of elements in Cu(In,Ga)S2 films

Autor: Kaigawa, R.¹ kaigawa@rins.ryukoku.ac.jp, Wada, T.², Bakehe, S.³, Klenk, R.³

Publikováno v: Thin Solid Films. Jun2005, Vol. 480-481, p71-75. 5p.