Integrated high performance (100) and (110) oriented single-grain Si TFTs without seed substrate

Autor: Ryoichi Ishihara, Johan van der Cingel, Kees Beenakker, M. R. Tajari Mofrad, Hugo Schellevis, Tao Chen, Baiano Alessandro

Publikováno v: 2009 IEEE International Electron Devices Meeting (IEDM).

We report high performance (100) and (110) oriented single-grain thin-film-transistors (SG-TFTs) fabricated below 600°C without any seed substrate. The orientation has been contolled by ¼-Czochralski process with the excimer laser. Field-effect mob

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8c69649c181092591af2317acdf6df3
https://doi.org/10.1109/iedm.2009.5424392

High Performance n- and p-channel Strained Single Grain Silicon TFTs using Excimer Laser.

Autor: Baiano, Alessandro, Ishihara, Ryoichi, Beenakker, Kees

Publikováno v: MRS Online Proceedings Library; 2009, Vol. 1153 Issue 1, p1-11, 11p

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An Assessment of μ-Czochra1ski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration.

Autor: Saputra, Nitz, Danesh, Mina, Baiano, Alessandro, Ishihara, Ryoichi, Long, John R., Karaki, Nobuo, Inoue, Satoshi

Publikováno v: IEEE Journal of Solid-State Circuits; Jul2008, Vol. 43 Issue 7, p1563-1576, 14p, 7 Black and White Photographs, 9 Diagrams, 5 Charts, 10 Graphs

Single Grain Si TFTs for RF and 3D ICs

Autor: Ishihara, Ryoichi, Baiano, Alessandro, Chen, Tao, Derakhshandeh, Jaber, Mofrad, Tajari, Danesh, Mina, Saputra, Nitz, Long, John R.

Publikováno v: ECS Transactions; July 2009, Vol. 22 Issue: 1 p57-68, 12p