Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Bahman Hekmatshoar"'
Autor:
Bahman Hekmatshoar, Ghavam G. Shahidi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 388-392 (2019)
A low-power noise amplifier is implemented with thin-film Si heterojunction field-effect transistors (HJFETs) and its suitability for generation of true random numbers is investigated. The HJFETs are operated at near subthreshold to obtain a large ou
Externí odkaz:
https://doaj.org/article/1d96433b179b49209290537fe165e8bb
Autor:
Bahman Hekmatshoar
Publikováno v:
IEEE Access, Vol 7, Pp 77063-77069 (2019)
Electrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si:H) gate and hydrogenated crystalline Si (c-Si:H) source and drain regions on small-grain poly-Si s
Externí odkaz:
https://doaj.org/article/9c0ad5f6423443a991f030a1bada13e3
Autor:
Bahman Hekmatshoar
In this work, a deterministic sequence suitable for approximate computing on stochastic computing hardware is proposed and its effectiveness in achieving high accuracies with relatively short sequence lengths is studied for convolutional neural netwo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4599234becc82d56e70bde16e4df351a
https://doi.org/10.36227/techrxiv.21937256
https://doi.org/10.36227/techrxiv.21937256
Autor:
Bahman Hekmatshoar
Publikováno v:
IEEE Transactions on Electron Devices. 62:3524-3529
The design parameters and reliability of thin-film heterojunction FET (HJFET) devices comprised of hydrogenated amorphous Si (a-Si:H) gate-stacks on crystalline Si (c-Si) substrates are discussed. It is shown that the pinchoff voltage of the HJFET ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4f759ab52d3946abf9da81ac5e8ad37
https://doi.org/10.1109/ted.2015.2463721
https://doi.org/10.1109/ted.2015.2463721
Autor:
Devendra K. Sadana, Stephen W. Bedell, Ning Li, Keith E. Fogel, Bahman Hekmatshoar, John A. Ott, Davood Shahrjerdi, Paul A. Lauro
Publikováno v:
ECS Transactions. 50:315-323
Although historically studied as a failure mode, substrate spalling can be transformed into a versatile layer transfer method by carefully controlling the thickness and intrinsic stress of a surface layer, and mechanically guiding the fracture path.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da050cce80c42dcfeca40ba40a621d93
https://doi.org/10.1149/05007.0315ecst
https://doi.org/10.1149/05007.0315ecst
Autor:
Bahman Hekmatshoar, K. Fogel, Devendra K. Sadana, Davood Shahrjerdi, Stephen W. Bedell, Norma E. Sosa, Paul A. Lauro, John A. Ott
Publikováno v:
IEEE Journal of Photovoltaics. 2:141-147
Kerf-less removal of surface layers of photovoltaic materials including silicon, germanium, and III-Vs is demonstrated by controlled spalling technology. The method is extremely simple, versatile, and applicable to a wide range of substrates. Control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f1c4cb612c4a5877305ba0522332d1b
https://doi.org/10.1109/jphotov.2012.2184267
https://doi.org/10.1109/jphotov.2012.2184267
Autor:
Devendra K. Sadana, Bahman Hekmatshoar, Stephen W. Bedell, Davood Shahrjerdi, Marinus Hopstaken
Publikováno v:
Journal of Electronic Materials. 41:494-497
We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was performed in a silane and hydrogen gas mixture at temperatures as low as 150C. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5430df3d2e503b96108033757f24efae
https://doi.org/10.1007/s11664-011-1807-6
https://doi.org/10.1007/s11664-011-1807-6
Publikováno v:
IEEE Journal of Photovoltaics. 1:104-107
We propose a novel hydrogenated amorphous silicon (a-Si:H)/GaAs heterostructure for photovoltaic solar cells. The structure has two key advantages: 1) low-temperature processing and 2) a relatively low cost of cell fabrication compared with conventio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4241c0aa156a9637a416cf18a41b2c3d
https://doi.org/10.1109/jphotov.2011.2164391
https://doi.org/10.1109/jphotov.2011.2164391
Autor:
Bahman Hekmatshoar
Publikováno v:
IEEE Electron Device Letters. 35:545-547
A thin blocking structure is incorporated in the gate-stack of heterojunction field-effect transistor (HJFET) devices to substantially suppress the gate current when the gate heterojunction is forward-biased. As a result, normally-OFF HJFET devices w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fb628f02dc59aed202fea08172e89fb
https://doi.org/10.1109/led.2014.2309113
https://doi.org/10.1109/led.2014.2309113
Autor:
Bahman Hekmatshoar
Publikováno v:
IEEE Electron Device Letters. :1-1
Thin-film heterojunction field-effect transistor (HJFET) devices with hydrogenated amorphous Si gate and hydrogenated poly-Si source and drain regions are demonstrated on small-grain poly-Si substrates. The transistor fabrication process (excluding p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00ce55d506caad247b0ff4f9419b76ef
https://doi.org/10.1109/led.2018.2868176
https://doi.org/10.1109/led.2018.2868176