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This paper presents, for the first time, the improvement of gain and bandwidth of water-gated field effect transistor (WG-FET) circuits using higher ion concentrations of NaCl solutions. WG-FET is fabricated using 16-nm-thick single crystalline silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d47fe7564693b838adfed67dd81e9a27
https://aperta.ulakbim.gov.tr/record/73805
https://aperta.ulakbim.gov.tr/record/73805
