Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Baghdad Hadri"'
Publikováno v:
Revue des Énergies Renouvelables, Pp 59 – 65-59 – 65 (2024)
Our research explores hybrid perovskite solar cells, promising low-cost and high-efficiency photovoltaic solutions. Despite challenges, optimizations like interface engineering enhance performance for future commercial use. Study of different physica
Externí odkaz:
https://doaj.org/article/654fc14917b74a3689e34976bcc23861
Publikováno v:
Indian Journal of Physics. 95:1977-1984
The downscaling of the SOI-MOSFET device has an important role of the advanced technology in the semiconductor industry, so the researchers aim to find the structure which can improve the considerable reduction, this paper is investigated a proposal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d33bb781ef0008f6d39d899546e0caf2
https://doi.org/10.1007/s12648-020-01846-9
https://doi.org/10.1007/s12648-020-01846-9
Publikováno v:
Optik. 174:167-172
The interface layers thickness effect has been studied for inverted organic solar cells based on Poly(3-hexylthiophene):[6,6] phenyl-C61-butyric Acid Methyl Ester (P3HT :PCBM). We used the SCAPS simulation tool from which we reproduced and predicted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf78b3d8ad98733ecae32fc34195b8b0
https://doi.org/10.1016/j.ijleo.2018.08.038
https://doi.org/10.1016/j.ijleo.2018.08.038
Autor:
Baghdad Hadri, Nour El Islam Boukortt
Publikováno v:
Indian Journal of Physics. 93:33-39
This paper investigates the outdoor bifacial n-type silicon passivated emitter rear cell (PERC) and the influence of the contact resistance and temperature dependence on the output properties by using Silvaco TCAD tools. PERC is considered as an effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a01a69902f61542560f07b5cda3a1a6d
https://doi.org/10.1007/s12648-018-1274-5
https://doi.org/10.1007/s12648-018-1274-5
Publikováno v:
Silicon. 11:145-152
This paper presents the results of an investigation of Passivated Emitter Rear Cell (PERC) solar cell technology and the current understanding of the fundamental device physics. The research work has been focused on the influence of the bulk lifetime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d77d1e284fe197ead9c302b4a16ebc9b
https://doi.org/10.1007/s12633-018-9838-8
https://doi.org/10.1007/s12633-018-9838-8
Publikováno v:
Silicon. 10:2193-2199
This paper investigates recent developments in Interdigitated Back Contact (IBC) solar cell physics and technology by using ATLAS Silvaco device simulator. The work has been focused on improvement of structural and electrical properties by using zinc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38da8e2bdc8ed11b27cdabf0ec37a723
https://doi.org/10.1007/s12633-017-9750-7
https://doi.org/10.1007/s12633-017-9750-7
Publikováno v:
Optical Materials. 121:111588
In this paper, we numerically study the Bulk Heterojunction (BHJ) inverted organic solar cells (OSCs) of ITO/ETL/POLYMER:PCBM/HTL/Ag using the effective medium model (EMM) with SCAPS-1D potential numerical tool. This model contributes to the charge t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70904492b71d6e356b534d5e97a86463
https://doi.org/10.1016/j.optmat.2021.111588
https://doi.org/10.1016/j.optmat.2021.111588
Publikováno v:
International Journal of Computer Applications. 139:28-32
nanoscale n-channel double gate fin field-effect transistor (FinFET) structures and their sensitivity to gate dielectric materials with different channel materials using SiGe and 3CSiC in the channel region. In this work, the numerical tool Atlas Sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7ab0f62e2321da1925c1eeadf34b0c5
https://doi.org/10.5120/ijca2016909385
https://doi.org/10.5120/ijca2016909385
Publikováno v:
International Journal of Computer Applications. 138:10-14
The objective of this work is to study the electrical characteristics of a nanoscale SOI Tri-Gate n-channel fin field-effect transistor (FinFET) structure with 8 nm gate length using Semiconductor TCAD tools. ATLASTM tools are computer programs which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f65e92f7bf1f6057c233ebd8a36182d
https://doi.org/10.5120/ijca2016908981
https://doi.org/10.5120/ijca2016908981
Publikováno v:
The European Physical Journal B. 91
The effect of percolation threshold on the behaviour of electrical conductivity at high electric field of insulating polymers has been briefly investigated in literature. Sometimes the dead ends links are not taken into account in the study of the el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4441ab28f55679b55a67495e5ad6fb16
https://doi.org/10.1140/epjb/e2017-80431-x
https://doi.org/10.1140/epjb/e2017-80431-x