Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Baegmo Son"'
Autor:
Eunseon Yu, Baegmo Son, Byungmin Kam, Yong Sang Joh, Sangjoon Park, Won‐Jun Lee, Jongwan Jung, Seongjae Cho
Publikováno v:
ETRI Journal, Vol 41, Iss 6, Pp 829-837 (2019)
The p‐type nanowire field‐effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in‐depth technology computer‐aided design (TCAD) with quantum models for sub‐10‐nm advanced logic techn
Externí odkaz:
https://doaj.org/article/805c2fc8530d4402b99abdd3f57d621a
Autor:
Jongwan Jung, Baegmo Son, Byungmin Kam, Yong Sang Joh, Woonyoung Jeong, Seongjae Cho, Won-Jun Lee, Sangjoon Park
Publikováno v:
Materials, Vol 14, Iss 13, p 3733 (2021)
The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy proce
Externí odkaz:
https://doaj.org/article/6410ca4b70894672bbd5e8aa8cf7f79d
Autor:
Won-Jun Lee, Jongwan Jung, Woonyoung Jeong, Byungmin Kam, Seongjae Cho, Baegmo Son, Yong Sang Joh, Sang-Joon Park
Publikováno v:
Materials
Materials, Vol 14, Iss 3733, p 3733 (2021)
Volume 14
Issue 13
Materials, Vol 14, Iss 3733, p 3733 (2021)
Volume 14
Issue 13
The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cb63a4204977dc591d5ba07cf5c2895
http://europepmc.org/articles/PMC8269887
http://europepmc.org/articles/PMC8269887
Autor:
Won-Jun Lee, Jongwan Jung, Yong Sang Joh, Seongjae Cho, Eunseon Yu, Sang-Joon Park, Byungmin Kam, Baegmo Son
Publikováno v:
ETRI Journal, Vol 41, Iss 6, Pp 829-837 (2019)
The p‐type nanowire field‐effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in‐depth technology computer‐aided design (TCAD) with quantum models for sub‐10‐nm advanced logic techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6b541b504fb97d777b335e212d604e1
https://doaj.org/article/805c2fc8530d4402b99abdd3f57d621a
https://doaj.org/article/805c2fc8530d4402b99abdd3f57d621a