Zobrazeno 1 - 2
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pro vyhledávání: '"Bae Kwang-Hyuk"'
Autor:
Oh, Min Seok, Kong, Hae Kyung, Lee, Han Soo, Kim, Kyung Il, Bae, Kwang Hyuk, Kim, Soo Bang, Kim, Sung Kwan, Lim, Moo Sup, Ahn, Jung Chak, Kim, Tae Chan, Hiroshige, Goto, Kim, Seoung Hyun, Min, Dong Ki, Lee, Yong Jei
Publikováno v:
10th IEEE International NEWCAS Conference; 1/ 1/2012, p325-328, 4p
Autor:
Bae Kwang-Hyuk, Burm Jin-Wook, Park Hyun-Chang, Park Hoon, Park Jin-Kuk, Jung Ji-Hak, Song Nam-Jin, Shin Dong-Hyuk
Publikováno v:
Journal of the Korean Physical Society. 40:588
4H-SiC MESFET’s on conducting substrates were designed, fabricated, and DC characterized. An inductively coupled plasma etcher was developed and used for the channel recess etching of the MESFET. Fabricated MESFET’s with 1-μm gate lengths and 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afb365f0ca665e6d188528f4f912b981
https://doi.org/10.3938/jkps.40.588
https://doi.org/10.3938/jkps.40.588