Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Bae, Hansang"'
Autor:
Ahmed, Shaikh, Kharche, Neerav, Rahman, Rajib, Usman, Muhammad, Lee, Sunhee, Ryu, Hoon, Bae, Hansang, Clark, Steve, Haley, Benjamin, Naumov, Maxim, Saied, Faisal, Korkusinski, Marek, Kennel, Rick, McLennan, Michael, Boykin, Timothy B., Klimeck, Gerhard
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and de
Externí odkaz:
http://arxiv.org/abs/0901.1890
Autor:
Bae, Hansang1 baeh@purdue.edu, Mustafa, Dheya1 dmustaf@purdue.edu, Lee, Jae-Woo1 jaewoolee@purdue.edu, Aurangzeb1 orangzeb@purdue.edu, Lin, Hao1 lin116@purdue.edu, Dave, Chirag2 cdave@qualcomm.com, Eigenmann, Rudolf1 eigenman@purdue.edu, Midkiff, Samuel1 smidkiff@purdue.edu
Publikováno v:
International Journal of Parallel Programming. Dec2013, Vol. 41 Issue 6, p753-767. 15p. 4 Black and White Photographs, 2 Diagrams, 1 Graph.
Autor:
Bae, Hansang, Clark, Steve, Haley, Ben, Hoon, Ryu, Klimeck, Gerhard, Lee, Sunhee, Luisier, Mathieu, Saied, Faisal
Publikováno v:
Other Nanotechnology Publications
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nano-devices, in which the quantum nature of charge carriers dominates the device properties and performance. The need for atomistic-level modeling is parti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::9feac96641db5bf2b19ef3bede788718
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1142&context=nanodocs
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1142&context=nanodocs
Autor:
Klimeck, Gerhard, Ahmed, Shaikh S, Bae, Hansang, Kharche, Neerav, Rahman, Rajib, Clark, Steve, Haley, Benjamin, Lee, Sunhee, Naumov, Maxim, Ryu, Hoon, Saied, Faisal, Prada, Marta, Korkusinski, Marek, Boykin, Timothy
Publikováno v:
Other Nanotechnology Publications
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::a8b6810c752e6faa8428e11a6fac4141
https://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1108&context=nanodocs
https://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1108&context=nanodocs
Publikováno v:
Other Nanotechnology Publications
This paper describes recent progress in large scale numerical simulations for computational nano-electronics using the NEMO3-D package. NEMO3-D is a parallel analysis tool for nano-electronic devices such as quantum dots. The atomistic model used in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::f838d2d49e20979d413b45c02378c1b9
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1151&context=nanodocs
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1151&context=nanodocs
Autor:
Bihari, Barna L., Bae, Hansang, Cownie, James, Klemm, Michael, Terboven, Christian, Diachin, Lori
Publikováno v:
OpenMP: Heterogenous Execution & Data Movements; 2015, p133-148, 16p
Publikováno v:
Using & Improving OpenMP for Devices, Tasks & More; 2014, p173-186, 14p
Publikováno v:
Languages & Compilers for Parallel Computing (9783642360350); 2013, p141-155, 15p
Autor:
Kwon, Okwan, Jubair, Fahed, Min, Seung-Jai, Bae, Hansang, Eigenmann, Rudolf, Midkiff, Samuel P.
Publikováno v:
Languages & Compilers for Parallel Computing (9783642360350); 2013, p1-15, 15p
Publikováno v:
Openmp Shared Memory Parallel Programming (9783540685548); 2008, p24-35, 12p