Výsledky vyhledávání - "Bader Alharthi"

Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System

Autor: Baohua Li, Perry C. Grant, Seyed Amir Ghetmiri, Joshua M. Grant, Abbas Sabbar, Wei Dou, Shui-Qing Yu, Aboozar Mosleh, Zhong Chen, Fatma Yurtsever, Hameed A. Naseem, Bader Alharthi, Mansour Mortazavi

Publikováno v: Journal of Electronic Materials. 49:4809-4815

Silicon–germanium (SiGe) films have been grown using chemical vapor deposition on c-plane sapphire substrates. Optical and material characterization of the films show successful alloying of SiGe up to 22.4% Si. X-ray diffraction characterizations s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9d380cf7ab9949cbfc3a57811485e4dd
https://doi.org/10.1007/s11664-020-08169-9

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Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications

Autor: Perry C. Grant, Wei Dou, Timothy Morgan, Bader Alharthi, Baohua Li, Joshua M. Grant, Hameed A. Naseem, Shui-Qing Yu, Mansour Mortazavi, Wei Du, Aboozar Mosleh

Publikováno v: Applied Surface Science. 481:246-254

Under low thermal budget, high-quality Ge buffers were grown using plasma enhanced chemical vapor deposition (PECVD) technique by a two-step method in a cold-wall ultra-high vacuum system. Low threading dislocation density on the order of 107 cm−2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02e8f8615c967eda68021bdf916dbcef
https://doi.org/10.1016/j.apsusc.2019.03.062

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Study of SiGeSn/GeSn single quantum well towards high-performance all-group-IV optoelectronics

Autor: Joe Margetis, Baohua Li, Shui-Qing Yu, Perry C. Grant, Yiyin Zhou, Andrian Kuchuk, Solomon Ojo, Grey Abernathy, John Tolle, Bader Alharthi, Wei Du

The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated aiming to impro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ee148302601ef3a788a173241aff470
http://arxiv.org/abs/2009.12254

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Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Autor: Hameed A. Naseem, Wei Du, Perry C. Grant, Joshua M. Grant, Wei Dou, Aboozar Mosleh, Bader Alharthi, Mansour Mortazavi, Shui-Qing Yu, Baohua Li

Publikováno v: Journal of Electronic Materials. 47:4561-4570

Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low tem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::648ddfb029b960785d94abfee52dd5a3
https://doi.org/10.1007/s11664-018-6315-5

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Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications

Autor: Mansour Mortazavi, Yiyin Zhou, Hameed A. Naseem, Baohua Li, Mourad Benamara, Seyed Amir Ghetmiri, Joe Margetis, Wei Du, Wei Dou, Aboozar Mosleh, John Tolle, Andrian Kuchuk, Shui-Qing Yu, Bader Alharthi, Sattar Al-Kabi

Publikováno v: Journal of Electronic Materials. 45:6265-6272

This paper reports the study of Ge0.95Sn0.05/Ge0.91Sn0.09/Ge0.95Sn0.05 single quantum well (SQW) and double quantum wells (DQWs). The quantum well (QW) structures were grown on Ge buffered Si substrates using an industrial standard reduced-pressure c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1edf242d7dd6b99a49b9ec5264fa1eb5
https://doi.org/10.1007/s11664-016-5031-2

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Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl4 Precursor

Autor: Murtadha Alher, Sattar Al-Kabi, Husam H. Abu-Safe, Huong Tran, Wei Dou, Seyed Amir Ghetmiri, Perry C. Grant, Shui-Qing Yu, Aboozar Mosleh, Wei Du, Bader Alharthi, Mansour Mortazavi, Larry Cousar, Baohua Li, Hameed A. Naseem, Mourad Benamara

Publikováno v: ECS Transactions. 69:279-286

Tin-based silicon photonics has been widely explored due to the ability of achieving direct bandgap group IV alloys by incorporating Sn in Ge and SiGe lattices. Chemical vapor deposition has been one of the major methods for the growth of GeSn ans Si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71087695ff6ed3d03f2a7ec7c4f3d9e4
https://doi.org/10.1149/06905.0279ecst

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UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices

Autor: Baohua Li, Perry C. Grant, Shui-Qing Yu, Mansour Mortazavi, Bader Alharthi, Hameed A. Naseem, Wei Dou, Joshua M. Grant, Huong Tran, Wei Du, Aboozar Mosleh, Grey Abernathy

Publikováno v: Optical Materials Express. 9:3277

The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand for an efficient light source that could be monolithically integrated on Si for mid-infrared Si photonics. For chemical vapor deposition of GeSn, the explora

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d25ffe1488af90b7091ff11bc106bb6d
https://doi.org/10.1364/ome.9.003277

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