Zobrazeno 1 - 10
of 1 934
pro vyhledávání: '"Back-end"'
Publikováno v:
Taiyuan Ligong Daxue xuebao, Vol 55, Iss 4, Pp 640-649 (2024)
Purposes The sparse feature map established by using VSLAM cannot be directly used for navigation, and the existing methods of converting sparse feature maps into grid maps for navigation suffer from low accuracy of map construction, resulting in the
Externí odkaz:
https://doaj.org/article/08e821f0c9b24ba18e655bf5db33fab9
Autor:
Omesh Kapur, Dongkai Guo, Jamie Reynolds, Daniel Newbrook, Yisong Han, Richard Beanland, Liudi Jiang, C. H. Kees de Groot, Ruomeng Huang
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract Integrating resistive memory or neuromorphic memristors into mainstream silicon technology can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and stacked directly above the logic circuitries. Here we re
Externí odkaz:
https://doaj.org/article/310a2511724a4e97beaca14530c113bd
Publikováno v:
IEEE Journal of Microwaves, Vol 4, Iss 2, Pp 193-203 (2024)
This paper introduces a dual band-pass and dual band-stop filter that is designed along its flexible back-end circuitry to sense and monitor muscle contractions. The filter and its back-end circuit are proposed to be wearable, flexible, and stretchab
Externí odkaz:
https://doaj.org/article/898e91c9083c477a9dc7c119b584a324
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 13-21 (2024)
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes. One of the major challenges in scal
Externí odkaz:
https://doaj.org/article/c57ce292b48d402b8edde7ca486724fd
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract The well‐developed high‐k technologies ease the integration complexity for HfO2‐based ferroelectric (FE) devices in the complementary metal‐oxide semiconductor processes. Sputtered HfxZr(1‐x)O2 (HZO) FEs have proven their thermal c
Externí odkaz:
https://doaj.org/article/e3e28de40e93463fa659213b18096496
Autor:
Laura Bégon‐Lours, Stefan Slesazeck, Donato Francesco Falcone, Viktor Havel, Ruben Hamming‐Green, Marina Martinez Fernandez, Elisabetta Morabito, Thomas Mikolajick, Bert Jan Offrein
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In artificial neural networks, the “synaptic weights” connecting the neurons are adjusted during the training. Beyond silicon, functionalizing the back‐end‐of‐line (BEOL) of CMOS circuits with novel materials is a key enabler for d
Externí odkaz:
https://doaj.org/article/cc53c747321341ec83b40a6a337fe156
Autor:
Ku, Edward C.S., Chen, Chun-Der
Publikováno v:
Business Process Management Journal, 2023, Vol. 29, Issue 3, pp. 838-857.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/BPMJ-11-2022-0562
Publikováno v:
International Journal of Electrical, Energy and Power System Engineering, Vol 6, Iss 2, Pp 161-167 (2023)
Laboratories usually have different tools, materials, documents, and a lot of other content. At the University of Riau, especially the Faculty of Engineering, it is filled with many laboratories. Starting with a computer network laboratory and chemic
Externí odkaz:
https://doaj.org/article/4c84072b66c4436e9a4f05e4b725ab47
Publikováno v:
IEEE Access, Vol 11, Pp 124386-124429 (2023)
In the rapidly evolving landscape of software development, this study aims to introduce and assess the nMorph framework, a potential breakthrough in multi-programming-language software development. This approach aspires to empower developers to code
Externí odkaz:
https://doaj.org/article/82a56e5163d644c4baf9c05553052e15
Autor:
Min-Sik Kim, Keun Wook Shin, Sang-Hoon Lee, Yongsub Kim, Hyun-Mi Kim, Sang-Koog Kim, Hyeon-Jin Shin, Ki-Bum Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 399-405 (2023)
The downscaling of metal lines in CMOS devices to subnanometer sizes leads to an increase in their resistivity. Thus, the lower electron mean free paths of Ru, Rh, and Ir make them promising materials to replace Cu in conventional interconnected stru
Externí odkaz:
https://doaj.org/article/ae4d960d455344afa718fb89bcd2a4c7