Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Bachir Dirahoui"'
Autor:
Laura Safran, Stephen Lucarini, Sweta Pendyala, Timothy A. Brunner, David Clark, Zhigang Song, Weihao Weng, Karl Barth, Cathy Gow, Brett Engel, Anne Friedman, Bachir Dirahoui, Keliang He, Richard F. Hafer
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The ever-shrinking world of semiconductors has always challenged the interplay of tool capability, process integration, and characterization. The fine line between structural or electrical success and failure has steadily been redefined from microns
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eda614ab80ce5645d9bdaecded890391
https://doi.org/10.1109/asmc.2017.7969187
https://doi.org/10.1109/asmc.2017.7969187
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Processor technology is going through multiple changes in terms of patterning techniques (multipatterning, EUV and DSA), device architectures (FinFET, nanowire, graphene) and patterning scale (few nanometers). These changes require tighter controls o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53ae787d8b0b824575d6ce2c8f5b33c2
https://doi.org/10.1109/asmc.2015.7164502
https://doi.org/10.1109/asmc.2015.7164502
Publikováno v:
SPIE Proceedings.
Integrate circuit (IC) technology is going through multiple changes in terms of patterning techniques (multiple patterning, EUV and DSA), device architectures (FinFET, nanowire, graphene) and patterning scale (few nanometers). These changes require t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39d7f535582f3ba78c607877458505b
https://doi.org/10.1117/12.2087406
https://doi.org/10.1117/12.2087406
Autor:
Glenn A. Biery, Zachary Baum, Bachir Dirahoui, Mike D. Monkowski, Deborah A. Ryan, Atsushi Ogino, Oliver D. Patterson, Shuen-Cheng Chris Lei, Jim Shih-Chun Liang, David Conklin
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 14:021106
Early in-line detection of systematic patterning problems in technology development can dramatically improve a technology’s chance for success. By uncovering layout geometries that are difficult to implement, prompt action may be taken so that solu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c27c5e2ea771780cff82872aa6e13758
https://doi.org/10.1117/1.jmm.14.2.021106
https://doi.org/10.1117/1.jmm.14.2.021106
Autor:
Tom Faure, Bachir Dirahoui, Gary Berg, Arpan P. Mahorowala, Scott Halle, W. Yan, Asuka Nomura, Allen H. Gabor, William M. Chu, Alexandra Barberet, Andrew Brendler, Amr Abdo, Donald J. Samuels, Len Y. Tsou, Kaushal Patel, Faisal Azam, Seiji Iseda, Ishtiaq Ahsan, Jeffrey A. Zimmerman
Publikováno v:
SPIE Proceedings.
With the nominal gate length at the 65 nm node being only 35 nm, controlling the critical dimension (CD) in polysilicon to within a few nanometers is essential to achieve a competitive power-to-performance ratio. Gate linewidths must be controlled, n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0fb440094203312b62322c7b84637c1
https://doi.org/10.1117/12.659427
https://doi.org/10.1117/12.659427