Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Babazadeh, Nasser"'
Autor:
Phillips, Catherine L., Brash, Alistair J., Godsland, Max, Martin, Nicholas J., Foster, Andrew, Tomlinson, Anna, Dost, Rene, Babazadeh, Nasser, Sala, Elisa M., Wilson, Luke, Heffernan, Jon, Skolnick, Maurice S., Fox, A. Mark
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for integration into
Externí odkaz:
http://arxiv.org/abs/2310.19701
Autor:
Bian, Zijun, Rae, Katherine J., McKenzie, Adam F., King, Ben C., Babazadeh, Nasser, Li, Guangrui, Orchard, Jonathan R., Gerrard, Neil D., Thoms, Stephen, McLaren, Donald A., Taylor, Richard J. E., Childs, David, Hogg, Richard A.
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
Comment: 4 pages, 5 figures, journal submission for review
Comment: 4 pages, 5 figures, journal submission for review
Externí odkaz:
http://arxiv.org/abs/2010.09306
Autor:
Phillips, Catherine L., Brash, Alistair J., Godsland, Max, Martin, Nicholas J., Foster, Andrew, Tomlinson, Anna, Dost, René, Babazadeh, Nasser, Sala, Elisa M., Wilson, Luke, Heffernan, Jon, Skolnick, Maurice S., Fox, A. Mark
Publikováno v:
Scientific Reports; 8/8/2024, Vol. 14 Issue 1, p1-9, 9p
Akademický článek
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Publikováno v:
Applied Physics Letters. 120:211102
We investigated the stable polarization-pinning properties of substrate emission InGaAs-based 980 nm multi-mode vertical-cavity surface-emitting lasers (VCSELs). For the multi-mode 40 um diameter aperture VCSELs, we introduced 30 μm wide, 9 μm dept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0de9862bf04c5e51007d3c2f96f7fec3
https://doi.org/10.1063/5.0087166
https://doi.org/10.1063/5.0087166
Autor:
Bian, Zijun, Rae, Katherine J., McKenzie, Adam F., King, Ben C., Babazadeh, Nasser, Li, Guangrui, Orchard, Jonathan R., Gerrard, Neil D., Thoms, Stephen, McLaren, Donald A., Taylor, Richard J. E., Childs, David, Hogg, Richard A.
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
4 pages, 5 figures, journal submission for review
4 pages, 5 figures, journal submission for review
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba494e5b9c9356f13bc466b57f217131
Akademický článek
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Autor:
Bian, Zijun, Rae, Katherine J., McKenzie, Adam F., King, Ben C., Babazadeh, Nasser, Li, Guangrui, Orchard, Jonathan R., Gerrard, Neil D., Thoms, Stephen, MacLaren, Donald A., Taylor, Richard J. E., Childs, David, Hogg, Richard A.
Publikováno v:
IEEE Photonics Technology Letters; 12/15/2020, Vol. 32 Issue 24, p1531-1534, 4p
Autor:
Roberts, Timothy S., Stevens, Benjamin J., Clarke, Edmund, Tooley, Ian, Orchard, Jonathan, Farrer, Ian, Childs, David T.D., Babazadeh, Nasser, Ozaki, Nobuhiko, Mowbray, David, Hogg, Richard A.
MOVPE growth of stacked InAs/GaAs QDs with and without GaAs0.8P0.2 strain balancing layers has been studied. The GaAsP layers reduce the accumulated strain whilst maintaining the electrical characteristics. This should enable closer stacking of QD la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::ccd651bc70efda25cdebabce566cb37b
https://eprints.gla.ac.uk/137397/1/137397.pdf
https://eprints.gla.ac.uk/137397/1/137397.pdf