Zobrazeno 1 - 10
of 145
pro vyhledávání: '"Babak Kazemi"'
Autor:
Seyed Arash Bagherinejad Somesara, Leili Faridi, Kamran Mohammadi, Babak Kazemi Arbat, Mehran Rahimi, Razieh Parizad, Mehrnoush Toufan Tabrizi
Publikováno v:
Caspian Journal of Internal Medicine, Vol 14, Iss 1, Pp 60-68 (2023)
Background: Atrial fibrillation (AF) is a common complication after heart surgeries. Advances in imaging technologies and an understanding of the pathophysiology of preoperative left atrial (LA) dysfunction can lead to more definitive potential thera
Externí odkaz:
https://doaj.org/article/825db53483f445dc84ad2f36107ac429
Publikováno v:
Journal of Cardiovascular and Thoracic Research, Vol 14, Iss 2, Pp 108-115 (2022)
Introduction: Autonomic changes play an essential role in the genesis of neurally mediated syncope (NMS). The aim of this study was to compare the changes of the autonomic nervous system (ANS) by measuring spectral indices of beat-to-beat systolic bl
Externí odkaz:
https://doaj.org/article/732ba30728284e4ab0563a0f768bb502
Publikováno v:
Journal of Tehran University Heart Center, Vol 18, Iss 2 (2023)
Background: Atrial fibrillation (AF) is a supraventricular tachyarrhythmia characterized by disorganized atrial activity and subsequent mechanical atrial failure. Postoperative AF is a frequent complication of coronary artery bypass grafting (CABG).
Externí odkaz:
https://doaj.org/article/f7ca8a4f6c1d4f85ac51088c6decf11b
Autor:
Babak Kazemi, Seyyed-Reza Sadat-Ebrahimi, Abdolmohammad Ranjbar, Fariborz Akbarzadeh, M. Reza Sadaie, Naser Safaei, Mehdi Esmaeil zadeh-Saboor, Bahram Sohrabi, Samad Ghaffari
Publikováno v:
BMC Cardiovascular Disorders, Vol 21, Iss 1, Pp 1-11 (2021)
Abstract Background aVR lead is often neglected in routine clinical practice largely because of its undefined clinical utility specifications. Nevertheless, positive T-wave in aVR lead has been reported to be associated with poor clinical outcomes in
Externí odkaz:
https://doaj.org/article/506fe9b5db3f4d2aa13a94d191b67460
Autor:
Abdolmohammad Ranjbar, Bahram Sohrabi, Seyyed-Reza Sadat-Ebrahimi, Samad Ghaffari, Babak Kazemi, Naser Aslanabadi, Babak Seyvani, Reza Hajizadeh
Publikováno v:
BMC Cardiovascular Disorders, Vol 21, Iss 1, Pp 1-6 (2021)
Abstract Background Up to over half of the patients with ST-segment elevation myocardial infarction (STEMI) are reported to undergo spontaneous reperfusion without therapeutic interventions. Our objective was to evaluate the applicability of T wave i
Externí odkaz:
https://doaj.org/article/76c3ab39d5994926be5c306cc4c1e12b
Autor:
Valeriya Kilchytska, Sergej Makovejev, Babak Kazemi Esfeh, Lucas Nyssens, Arka Halder, Jean-Pierre Raskin, Denis Flandre
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 500-510 (2021)
This review paper assesses the main approaches in the electrical characterization of advanced MOSFETs towards their future analog and RF applications. Those approaches are shown to be different from the traditionally used ones for the assessment of t
Externí odkaz:
https://doaj.org/article/cdb66ae5dc3c41f7ad244224734162ac
Autor:
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Denis Flandre, Valeriya Kilchytska, Jean-Pierre Raskin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 646-654 (2020)
This work presents a detailed RF characterization of 28-nm FD-SOI nMOSFETs at cryogenic temperatures down to 4.2 K. Two main RF Figures of Merit (FoMs), i.e., current-gain cutoff frequency (ft) and maximum oscillation frequency (fmax), as well as par
Externí odkaz:
https://doaj.org/article/604d5dc80ab54f939d62a7e5ef122832
Autor:
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 789-796 (2020)
This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed t
Externí odkaz:
https://doaj.org/article/0272cd05220a4e07b332e6db4491c173
Autor:
Babak Kazemi Esfeh, Valeriya Kilchytska, N. Planes, M. Haond, Denis Flandre, Jean-Pierre Raskin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 810-816 (2019)
This paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency (fT) and maximum oscillation frequency (fmax), as well as element
Externí odkaz:
https://doaj.org/article/a3798bc68dbd4473a5fcf2c48760a450
Autor:
Cardinael, Pieter, Yadav, Sachin, Hahn, Herwig, Zhao, Ming, Banerjee, Sourish, Esfeh, Babak Kazemi, Mauder, Christof, Sullivan, Barry O, Peralagu, Uthayasankaran, Vohra, Anurag, Langer, Robert, Collaert, Nadine, Parvais, Bertrand, Raskin, Jean-Pierre
Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface between the III-N layer and the HR Si wafer, more specifically the Al
Externí odkaz:
http://arxiv.org/abs/2404.02707
