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pro vyhledávání: '"Ba-Phuoc Le"'
Publikováno v:
Results in Engineering, Vol 24, Iss , Pp 103688- (2024)
The further reduction of semiconductor nanometer line width has led to increasingly higher silicon epitaxial film surface flatness requirement. This study conducts a series of numerical simulations to examine the use of multiple inlet plates in an at
Externí odkaz:
https://doaj.org/article/c8054734aedf444b94ddba4b233c5d25
