Zobrazeno 1 - 7
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pro vyhledávání: '"BX Ning"'
Publikováno v:
Acta Physica Sinica. 61:050702
The influence of channel length on total ionizing dose effect in a 180 nm complementary metal-oxide semiconductor technology is studied. When other conditions such as radiation bias, device structure are the same, the overall radiation response is de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6982c762954e7137cf03fad24ef53ccd
https://doi.org/10.7498/aps.61.050702
https://doi.org/10.7498/aps.61.050702
Autor:
Wei, Mengxi1 (AUTHOR), Qiao, Lan1 (AUTHOR), Li, Qingwen1 (AUTHOR) qingwenli@ustb.edu.cn, Deng, Naifu1 (AUTHOR)
Publikováno v:
Fatigue & Fracture of Engineering Materials & Structures. Dec2023, Vol. 46 Issue 12, p4465-4485. 21p.
Autor:
Li, Diyuan1 (AUTHOR) diyuan.li@csu.edu.cn, Zhang, Chenxi1 (AUTHOR), Zhu, Quanqi1 (AUTHOR), Ma, Jinyin1 (AUTHOR), Gao, Feihong1 (AUTHOR)
Publikováno v:
Fatigue & Fracture of Engineering Materials & Structures. Feb2022, Vol. 45 Issue 2, p425-440. 16p.
Autor:
Kouete, Marcel T., Bletz, Molly C., LaBumbard, Brandon C., Woodhams, Douglas C., Blackburn, David C.
Publikováno v:
Animal Microbiome; 5/15/2023, Vol. 5 Issue 1, p1-15, 15p
Publikováno v:
Rock Mechanics & Rock Engineering; Jan2023, Vol. 56 Issue 1, p143-166, 24p
Publikováno v:
KSCE Journal of Civil Engineering; Aug2022, Vol. 26 Issue 8, p3471-3485, 15p
Autor:
Ma, T.P., Chin, M.R.
Publikováno v:
1979 International Electron Devices Meeting; 1979, p224-228, 5p