Zobrazeno 1 - 10
of 122
pro vyhledávání: '"BRUNO LENGELER"'
Publikováno v:
Bulletin des Sociétés Chimiques Belges. 90:1249-1259
Information regarding the structure of the cobalt containing phases in calcined as well as sulfided Co-Mo/Al2O3 catalysts is obtained by analyzing the extended x-ray absorption fine structure (EXAFS) above the Co K-edge and comparing these results wi
Autor:
O. Kurapova, Bruno Lengeler, Marion Kuhlmann, Boris Benner, Christian G. Schroer, Federico Zontone, Irina Snigireva, Anatoly Snigirev, Til Florian Gunzler
Publikováno v:
Journal of Physics D: Applied Physics. 38:A218-A222
Parabolic refractive x-ray lenses are novel optical components for the hard x-ray range from about 5 keV to about 120 keV. They are compact, robust, and easy to align and to operate. They can be used like glass lenses are used for visible light, the
Autor:
Bruno Lengeler, Bennett C. Larson
Publikováno v:
MRS Bulletin. 29:152-156
This issue of MRS Bulletin focuses on the rapid progress that is ongoing in the development of hard x-ray microscopies with three-dimensional spatial resolutions ranging from micrometers to nanometers. The individual articles provide a crosscut of de
Autor:
Christian G. Schroer, Christiane Zimprich, Til Florian Gunzler, Jannik C. Meyer, Achim Gerhardus, Marion Kuhlmann, Boris Benner, Bruno Lengeler
Publikováno v:
Journal of Synchrotron Radiation. 9:119-124
Parabolic refractive X-ray lenses are optical components, especially suitable for third-generation synchrotron radiation sources. This article describes the status of the development of our lenses and illustrates the possibilities for micrometre and
Autor:
Bruno Lengeler, Liubov Samoylova, Thomas Roth, Lukas Helfen, Anders Madsen, Paweł Kwaśniewski, Jörg Hallmann
Publikováno v:
SPIE Proceedings.
Hard X-ray free electron lasers provide almost fully transverse coherent X-rays. Though the natural divergence of these X-rays is a few micro-radians, they still need to be collimated or focused while traveling up to 1km towards the sample. This can
Autor:
O. Chubar, Timm Weitkamp, Michael Drakopoulos, Bruno Lengeler, A. Souvorov, Anatoly Snigirev, F. Günzler, Irina Snigireva, Christian G. Schroer
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. :248-251
Parabolic compound refractive lenses (CRLs) for hard X rays have been used to image the electron beam at undulator and bending-magnet beamlines at the ESRF. The measurements yield the shape and size of the synchrotron radiation source, and show that
Autor:
Timm Weitkamp, Irina Snigireva, Bruno Lengeler, Marion Kuhlmann, J. Tümmler, Anatoly Snigirev, Boris Benner, Christian G. Schroer, Til Florian Gunzler, Christoph Rau
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. :966-969
For hard X-rays, parabolic compound refractive lenses (PCRLs) are genuine imaging devices like glass lenses for visible light. Based on these new lenses, a hard X-ray full field microscope has been constructed that is ideally suited to image the inte
Autor:
Joerg Appenzeller, Paul M. Solomon, Kang L. Wang, Bruno Lengeler, Y. Lu, Jorg Scholvin, Richard Martel, Joachim Knoch, J.A. del Alamo, Phaedon Avouris, Ch. Dieker
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1737-1741
We present the experimental details for the preparation of an ultrashort channel metal–oxide–semiconductor field-effect transistor (MOSFET) using a V-groove approach. This new fabrication process allows a definition of the channel with a resoluti
Publikováno v:
Physik Journal. 57:43-48
Zur Fokussierung weicher Rontgenstrahlung mit Photonenenergien von einigen hundert Elektronenvolt bis zu einigen Kilo-Elektronenvolt werden Zonenplatten als hochauflosende Rontgenlinsen in Rontgenmikroskopen eingesetzt. Im harten Rontgenbereich oberh
Publikováno v:
Scopus-Elsevier
In this report we present a procedure to fabricate highly transmissive superconducting Nb-In0.77Ga0.23As contacts. A combination of a sulphur passivation of the etched semiconductor prior to the deposition of Nb and an annealing step is used. To quan