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Autor:
Mikolajick, T., Schroeder, U., Lomenzo, P. D., Breyer, E. T., Mulaosmanovic, H., Hoffmann, M., Mittmann, T., Mehmood, F., Max, B., Slesazeck, S.
Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However, the complexity of ferroelectric perovskites has hindered the scaling of such devices to competitive feature sizes. The discovery of ferroelectricity
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https://tud.qucosa.de/api/qucosa%3A79686/attachment/ATT-0/
Logic-in-memory circuits promise to overcome the von-Neumann bottleneck, which constitutes one of the limiting factors to data throughput and power consumption of electronic devices. In the following we present four-input logic gates based on only tw
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Autor:
BREYER, E. T.
Publikováno v:
Notes & Queries; 4/17/1886 7th Series, Vol. 1 Issue 16, p308-g-308, 1p